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United Silicon Carbide, Inc.

Company Information
Address
650 College Rd E Ste 1500
Princeton, NJ 08540-6653
United States


http://www.unitedsic.com

Information

UEI: E1ZMN21UWJK5

# of Employees: 24


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. High Temperature Smart Sensor for Downhole Logging and Monitoring

    Amount: $999,473.00

    High-temperature smart sensors are desired for use in various harsh environment applications. Placing the sensing circuit close to the actual sensor would substantially reduce noise and interference p ...

    SBIRPhase II2011Department of Energy
  2. Development for Radiation Hardened Advanced Electronic Circuits

    Amount: $99,980.00

    In response to SBIR topic MDA09-T006, USCI proposes to develop the first medium-level integrated circuit for radiation-tolerant applications. The advanced integrated circuit will be demonstrated based ...

    STTRPhase I2010Department of Defense Missile Defense Agency
  3. High-Voltage and High-Frequency Power Switch for Next Generation Transmit Receiver Module Power Supplies

    Amount: $699,000.00

    In response to SBIR topic MDA08-029, USCI proposes to develop a unique 4H-SiC super-junction lateral JFET (SL-JFET), based on a novel and simple design, to solve all of the remaining problems facing t ...

    SBIRPhase II2010Department of Defense Missile Defense Agency
  4. High Temperature Silicon Carbide (SiC) Gate Driver

    Amount: $119,904.00

    Various harsh environment applications, such as the propulsion systems of Hybrid Electrical Vehicles (HEV), space systems, and energy exploration applications, require compact and efficient electrical ...

    SBIRPhase I2010Department of Defense Army
  5. High Temperature Smart Sensor for Downhole Logging and Monitoring

    Amount: $100,000.00

    High-temperature smart sensors are desired for use in various harsh environment applications. Placing the sensing circuit close to the actual sensor would substantially reduce noise and interference p ...

    SBIRPhase I2010Department of Energy
  6. Optically Gated, Silicon Carbide Semiconductors for Aircraft Electrical Actuator Motor Drives

    Amount: $100,000.00

    We propose an optically controlled power switch based on 4H-SiC TI-VJFETs for applications in EHA and EMA actuator motor drives for air platforms. It comprises a UV LED light source driver, an integra ...

    SBIRPhase I2009Department of Defense Air Force
  7. High-Voltage and High-Frequency Power Switch for Next Generation Transmit Receiver Module Power Supplies

    Amount: $100,000.00

    In response to SBIR topic MDA08-029, USCI proposes to develop a unique 4H-SiC super-junction lateral JFET (SL-JFET), based on a novel and simple design, to solve all of the remaining problems facing t ...

    SBIRPhase I2009Department of Defense Missile Defense Agency
  8. SBIR Phase I: Development of the First SiC PEBB

    Amount: $100,000.00

    This SBIR Phase I research project is to develop and commercialize the first silicon carbide monolithically integrated Power Electronic Building Block (PEBB). The proposed PEBB integrates a Vertical J ...

    SBIRPhase I2008National Science Foundation
  9. A Novel Approach to Packaging High-Power and High-Temperature SiC Modules for Double-sided Cooling

    Amount: $100,000.00

    In response to OSD/AF SBIR Topic No. OSD06-EP7, we propose to develop a novel and simple approach to packaging high-temperature and high-power SiC modules. The approach, simple to implement and suita ...

    SBIRPhase I2007Department of Defense Air Force
  10. SiC Power Converter

    Amount: $750,000.00

    This SBIR Phase II program is aimed at developing SiC based power converter technology up to 30kW and 50 kHz suitable for compact high power density and high temperature advanced gun system (AGS) and ...

    SBIRPhase II2007Department of Defense Navy
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