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United Silicon Carbide, Inc.

Company Information
Address
650 College Rd E Ste 1500
Princeton, NJ 08540-6653
United States


http://www.unitedsic.com

Information

UEI: E1ZMN21UWJK5

# of Employees: 24


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Reliable, High Temperature Silicon Carbide MOSFET

    Amount: $729,999.00

    This SBIR Phase II program, in response to topic number A05-236, aims at design and fabrication of a novel SiC power MOSFET to address the problems of (i) low channel mobility, (iii) low and unstable ...

    SBIRPhase II2007Department of Defense Army
  2. A Novel Approach to Packaging High-Power and High-Temperature SiC Modules for Double-sided Cooling

    Amount: $750,000.00

    In response to OSD/AF SBIR Topic No. OSD06-EP7, we propose to develop a novel and simple approach to packaging high-temperature and high-power SiC modules. The approach, simple to implement and suitab ...

    SBIRPhase II2007Department of Defense Air Force
  3. SBIR Phase I: Smart SiC DC-DC Power Converter for HEV

    Amount: $100,000.00

    This Small Business Innovation Research (SBIR) Phase I research project aims for feasibility demonstration of the first Power Integrated Circuit based on a very unique design of Silicon Carbide (SiC) ...

    SBIRPhase I2007National Science Foundation
  4. Uncooled Radiation Hard Large Area SiC X-ray and EUV Detectors and 2D Arrays

    Amount: $600,000.00

    This project seeks to design, fabricate, characterize and commercialize large area, uncooled and radiative hard 4H-SiC EUV ? soft X-ray detectors capable of ultra low noise photon counting. The detect ...

    SBIRPhase II2005National Aeronautics and Space Administration
  5. SBIR Phase II: Development of High Performance Ultraviolet Single Photon Detectors

    Amount: $500,000.00

    This Small Business Innovation Research (SBIR) Phase II research project aims to carry out the major R&D work to fully develop a 4H-SiC Single Photon Avalanche Detectors (SPADs) capable of ultra-sensi ...

    SBIRPhase II2005National Science Foundation
  6. Reliable, High Temperature Silicon Carbide MOSFET

    Amount: $120,000.00

    In response to SBIR topic A05-236, a proposal based on a novel concept in MOSFET design and fabrication is proposed to address the problems of (i) low channel mobility, (iii) low and unstable threshol ...

    SBIRPhase I2005Department of Defense Army
  7. An Advanced SiC Power Switch for Deep Space Power Systems

    Amount: $600,000.00

    We propose to design and fabricate advanced SiC power switch aimed at up to several kilowatt power system applications. The power switch is expected to lead to (i) substantially reduced volume and wei ...

    SBIRPhase II2004National Aeronautics and Space Administration
  8. Advanced High Current and Voltage SiC Diodes for Power Switching

    Amount: $750,000.00

    We propose to design, fabricate and develop an advanced SiC diode that can lead to (i) substantially reduced volume and weight of power systems, (ii) greatly expanded operating temperature range, and ...

    SBIRPhase II2004Department of Defense Navy
  9. A Novel Approach to High Power Density Packaging for High Temperature SiC Power Modules

    Amount: $730,000.00

    In response to Army SBIR Topic No. A02-232, we propose to develop a novel approach to package high power density SiC devices for high temperature operations. The proposed approach is aimed at achievin ...

    SBIRPhase II2004Department of Defense Army
  10. SiC Power Converter

    Amount: $69,887.00

    We propose to develop SiC based power converter technology up to 60kW suitable for compact high power density and high temperature AGS and other commercial applications. In Phase I, we shall concentra ...

    SBIRPhase I2004Department of Defense Navy
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