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United Silicon Carbide, Inc.

Company Information
Address
650 College Rd E Ste 1500
Princeton, NJ 08540-6653
United States


http://www.unitedsic.com

Information

UEI: E1ZMN21UWJK5

# of Employees: 24


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Uncooled Radiation Hard SiC Schottky VUV Detectors Capable of Single Photon Sensing

    Amount: $70,000.00

    This project seeks to design, fabricate, characterize and commercialize very large area, uncooled and radiative hard 4H-SiC VUV detectors capable of near single photon sensing. The detector design an ...

    SBIRPhase I2004National Aeronautics and Space Administration
  2. SBIR Phase II: Development of High Performance Ultraviolet Single Photon Detectors

    Amount: $100,000.00

    This Small Business Innovation Research (SBIR) Phase II research project aims to carry out the major R&D work to fully develop a 4H-SiC Single Photon Avalanche Detectors (SPADs) capable of ultra-sensi ...

    SBIRPhase I2004National Science Foundation
  3. A highly manufacturable technology for radiation-hardened and high-temperature system applications

    Amount: $100,000.00

    This SBIR Phase I project is proposed to develop a highly manufacturable technology for radiation-hardened high-temperature SiC devices for both military and commercial applications. The innovative de ...

    SBIRPhase I2004Department of Defense Missile Defense Agency
  4. High Temperature, High Power Density Electronic Devices

    Amount: $70,000.00

    This SBIR project is proposed to develop a high-temperature and high power density power system based on SiC power modules. The entire system will be designed to operate up to 120C ~ 150C ambient temp ...

    SBIRPhase I2004Department of Defense Navy
  5. An Advanced SiC Power Switch for Deep Space Power Systems

    Amount: $70,000.00

    We propose to design and fabricate advanced SiC power switch aimed at up to several kilowatt power system applications. The power switch is expected to lead to (i) substantially reduced volume and wei ...

    SBIRPhase I2003National Aeronautics and Space Administration
  6. A Novel Approach to High Power Density Packaging for High Temperature SiC Power Modules

    Amount: $120,000.00

    In response to Army SBIR Topic No. A02-232, we propose to develop a novel approach to package high power density SiC devices for high temperature operations. The proposed approach can lead to (i) subs ...

    SBIRPhase I2003Department of Defense Army
  7. Design and Fabrication of an Advanced SiC SIT for High Power Transmitter

    Amount: $750,000.00

    We propose to fully develop the innovative static induction transistor based on our successful feasibility demonstration performed in Phase I. The innovative process technology and the novel SIT desig ...

    SBIRPhase II2002Department of Defense Air Force
  8. Design and Fabrication of a Novel SiC Power Device

    Amount: $730,000.00

    Based on the successful device feasibility demonstration in Phase I, we propose to improve the design and fabrication technology and fully develop the novel SiC devices for high temperature and high p ...

    SBIRPhase II2002Department of Defense Army
  9. Advanced High Current and Voltage SiC Diodes for Power Switching

    Amount: $100,000.00

    "We propose to design, fabricate and develop an advanced SiC diode that can lead to (i) substantially reduced volume and weight of power systems, (ii) greatly expanded operating temperature range, and ...

    SBIRPhase I2002Department of Defense Navy
  10. Development of an Advanced High Yield Cost Effective SiC Process Technology for Manufacturing a New Class of SiC Power Devices

    Amount: $150,000.00

    We propose to improve and fully develop the innovative cost-effective SiC process technology demonstrated in Phase I to fabricate and commercialize a novel SiC vertical JFET (VJFET) whose feasibility ...

    SBIRPhase II2001Department of Defense Defense Advanced Research Projects Agency
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