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United Silicon Carbide, Inc.

Company Information
Address
650 College Rd E Ste 1500
Princeton, NJ 08540-6653
United States


http://www.unitedsic.com

Information

UEI: E1ZMN21UWJK5

# of Employees: 24


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Development of a High Performance SiC-Based Inverter for Motor Control Applications

    Amount: $0.00

    Based on the successful Phase I development of a SiC inverter for motor control in Phase I, we propose to perform the major R&D work in Phase II and commercialization development in Phase III for an a ...

    SBIRPhase I2001Department of Defense Defense Advanced Research Projects Agency
  2. Development of a High Performance SiC-Based Inverter for Motor Control Applications

    Amount: $375,000.00

    Based on the successful Phase I development of a SiC inverter for motor control in Phase I, we propose to perform the major R&D work in Phase II and commercialization development in Phase III for an a ...

    SBIRPhase II2001Department of Defense Defense Advanced Research Projects Agency
  3. Development of an Advanced High Yield Cost Effective SiC Process Technology for Manufacturing a New Class of SiC Power Devices

    Amount: $0.00

    We propose to improve and fully develop the innovative cost-effective SiC process technology demonstrated in Phase I to fabricate and commercialize a novel SiC vertical JFET (VJFET) whose feasibility ...

    SBIRPhase I2001Department of Defense Defense Advanced Research Projects Agency
  4. Design and Fabrication of An Advanced SiC SIT for High Power Transmitter

    Amount: $100,000.00

    In response to Air Force SBIR Topic No. AF01-222, we propose to designand fabricate advanced SiC SITs based on advanced SiC process technology.The advanced design is expected to lead to (i) substant ...

    SBIRPhase I2001Department of Defense Air Force
  5. Design and Fabrication of a Novel SiC Power Device

    Amount: $120,000.00

    We propose to design, fabricate, and commercialize a novel SiC power device for high temperature and high power applications. The proposed device does not reply on a future solution to the problem of ...

    SBIRPhase I2001Department of Defense Army
  6. N/A

    Amount: $99,000.00

    N/A

    SBIRPhase I2000Department of Defense Defense Advanced Research Projects Agency
  7. Quasi-Unipolar High Performance 4H-SiC Diodes for Motor Control Application

    Amount: $730,000.00

    N/A

    SBIRPhase II2000Department of Defense Army
  8. Quasi-Unipolar High Performance 4H-SiC Diodes for Motor Control Application

    Amount: $118,825.00

    Not Available The objective of this Phase I proposal is to develop carbon nanotube composites for use in demanding electronic applications on Navy aircraft and ships. Foster-Miller proposes to meet t ...

    SBIRPhase I1999Department of Defense Army
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