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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

Displaying 1 - 10 of 28 results
 
  • Record 1 TO 28

  1. ULTRAFAST DIAMOND FILM PHOTOCONDUCTIVE DETECTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    OVER THE PAST DECADE STUDIES HAVE INDICATED THAT IT IS POSSIBLE TO UTILIZE THE ULTRAFAST (PICOSECOND) RESPONSE TIMEOF A PHOTOCONDUCTOR TO DETECT AND TIME RESOLVE THE RAPID VARIATIONS OF LIGHT FROM A RAPIDLY CHANGING SOURCE SUCH AS APULSED LASER, A LASER FUSION EXPERIMENT, A DIRECTED ENERGY WEAPON OR A NUCLEAR WEAPONS EXPLOSION. IN ADDITION TO THE RAPID TEMPORAL EVOLUTION OF THE LIGHT OUTPUT FROM S ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency

  2. ULTRAFAST ALGORITHMS FOR REAL-TIME DETECTION AND CHARACTERIZATION OF CLOUDS

    SBC: Metsat, Inc.            Topic: N/A

    THE MICROPHYSICAL PROPERTIES OF CLOUDS AND THE MORPHOLOGY OF CLOUD FIELDS CAN HAVE SIGNIFICANT DETRIMENTAL EFFECTS ON THE SUCCESSFUL OPERATION OF A BALLISTIC MISSILE DEFENSE SYSTEM. A DETAILED FEASIBILITY STUDY IS BEING UNDERTAKEN OF DUAL VERY LARGE SCALE AND MEDIUM SCALE INTEGRATED CIRCUIT TECHNOLOGY BASED ULTRAFAST ALGORITHM IMPLEMENTATIONS FOR THE DETECTION AND CHARACTERIZATION OF CLOUDS. THE F ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency

  3. TIGHT PITCH FERROELECTRIC LIQUID CRYSTALS FOR ANALOG VOLTAGE LIMITED ELECTRO-OPTIC MODULATORS

    SBC: Displaytech Incorporated            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency

  4. THE VIDEO GUIDE TO EVALUATING DRUG ABUSE PREVENTION VIDEO PROGRAMS

    SBC: Media Group of CT.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of Education

  5. SOLID-STATE MULTIPLE-PASS AMPLIFIER FOR DIODE PUMPED COHERENT LASER RADAR SYSTEMS

    SBC: COHERENT TECHNOLOGIES, INC.            Topic: N/A

    SOLID-STATE LASER SYSTEMS HAVE BEEN IDENTIFIED AS A PARTICULARLY EFFECTIVE TRANSMITTER TECHNOLOGY FOR USE IN COHERENT LASER RADAR SYSTEMS, DUE TO THEIR NEAR-IR WAVELENGTH (1-2UM), COMPACTNESS, FREQUENCY AGILITY, AND EFFICIENCY. RECENT ADVANCES IN LASER DIODE ARRAY TECHNOLOGYHAVE OPENED NEW PROSPECTS FOR LONG LIFE, HIGH ENERGY AND AVERAGE POWER SOLID-STATE LASER RADAR INSTRUMENTS SUITABLE FOR EXTEN ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency

  6. RADIATION-HARD FERROELECTRIC-ON-GAAS RANDOM ACCESS MEMORIES FOR MISSILES AND/OR SPACECRAFT

    SBC: Symetrix Corporation            Topic: N/A

    A SYSTEMATIC STUDY OF THE SPUTTERING TECHNOLOGY AND INTERFACE METALLURGY FOR LEAD ZIRCONATE TITANTE/PLATIUM/GALLIUM-ARSENIDE (PZT/PT/GAAS) IS BEING UNDERTAKEN THAT IS EXPECTED TO PERMIT LARGE, RAD-HARD, NONVOLITLE FERROELECTRIC RANDOM ACCESS MEMORIES (RAMS) TO BECONSTRUCTED. EXISTING PROTOTYPE PZT MEMORY DEVICES HAVE BEEN FABRICATED THUS FAR ONLY ON COMPOSITE METAL-OXIDE SEMICONDUCTOR (CMOS) SILIC ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency

  7. POINT OF USE GENERATION OF GASES FOR OPTOELECTRONIC DEVICE FABRICATION

    SBC: Electron Transfer Tech            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency

  8. NIOBIUM NITROGEN JOSEPHSON JUNCTION STUDIES & DEVICES

    SBC: Martin Goffman Assoc.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency

  9. METALORGANIC MOLECULAR BEAM EPITAXY

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE) IS A SEMICONDUCTOR GROWTH TECHNIQUE THAT HAS THE POTENTIAL FOR COMBINING THE BEST FEATURES OF MOLECULAR BEAM EPITAXY WITH THOSE OF ORGANOMETALLIC VAPOR PHASE EPITAXY (OMVPE). A MAJOR PROBLEM HINDERING DEVELOPMENT OF MOMBE TECHNIQUES FOR GROWING GROUP III/V SEMICONDUCTORS IS THE AVAILABILITY OF APPROPRIATELY DESIGNED SOURCE REAGENTS THAT PERMIT EFFICIENT ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency

  10. METAL ORGANIC CHEMICAL VAPOR DEPOSITION GROWTH OF YTTRIUM BARIUM CARBON OXIDE ON LARGE AREA SUBSTRATES

    SBC: EMCORE CORP.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
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