Award Data

Integral Wave Technologies (formerly known as Arkansas Microelectronic Development Corporation) proposes to develop a process for growing ferroelectric, polycrystalline barium titinate (BaTiO3) thin-films, by anodic oxidation of co-sputteredbarium-titanium films (BaTi). Though films of this nature find applications in several electrical devices, Integral Wave will utilize this novel technology, if ...

The innovation proposed here is the use of carbon nanotube (CNT) field emission cathodes incorporated into a fully integrated array of RF sources. The goal is to design, fabricate and demonstrate an integrated array of sources for RF generation in theregion of 10 GHz. By integrating the sources together in one device, we can achieve higher levels of redundancy and durability, lower the manufactu ...

Applied Physical Electronics, L. C. (APELC) offers a portable, battery-powered RF generator well suited for UAV payloads, laboratory or field use. This proposed system would build on the current success of APELC's current Phase II efforts, in which largerimpulse generators are being developed. This proposed system will incorporate those successes to generate an impulse of microwave energy, at ver ...

The development of a process to produce semi-insulating (SI) silicon carbide (SiC) boules with improved yields will significantly reduce the cost of wafers and thus accelerate the rapid commercialization of SI SiC for microwave and RF system applications.The objective of this Phase II project is to improve and perfect the process development of a radically new approach for the synthesis of high pu ...

Absence of low defect density large diameter (~100mm) silicon carbide (SiC) wafers is a major barrier for the commercial production of SiC based devices. This phase I program is aimed at demonstrating a novel technique that will significantly reduce themechanical stress in SiC during boule growth. In phase I, we will demonstrate that by the proposed method, a significant reduction in the mechnic ...

This Phase I program is aimed at demonstrating the principle of off c-axis boule growth of 4H-SiC. In Phase I, using off-axis SiC seeds, we will demonstrate the growth of 4H-n SiC boules~15 mm long. Also in Phase I, we will slice the off-axis boules intowafers, lap and polish them, and perform structural and electrical characterization of the wafers. Comparisons will be made with on-axis wafers ...

This Phase I program is aimed at demonstrating a novel SiC source material synthesis technique that will be used to grow high resistivity SiC. In this effort, we will demonstrate that the proposed source material synthesis technique will produce SiCstarting material that is far superior to presently used material in terms of purity and process time, and that the high purity source material can be ...

We proposed a simple wafer scale method to leap frog current CMOS technology. The slow-down in CMOS scaling is limited by technology difficulties and by economics. In tooling up for .13-micron technology, the jump from .18-micron is costing $10 billionis equipment alone, plus accompanying expenses of redesign and module formulation. The net effect of this massive capital investment is to replac ...

The objective of Veracitas is to investigate the applicability of hybrid Belief Revision and Truth Maintenance techniques to increasing information trustworthiness in Situation Awareness databases. The specific problem for the DoD is that currentSituation Awareness and Data Fusion applications are implemented in systems having no capability for data base veracity. These databases are populated b ...

Diode rectifiers are one of the basic building blocks of any power system, ranging from common household appliances to motor controllers to power distribution systems to advanced military weapons and vehicles. Silicon technology for high voltage diodes islimited to ~9 kV. For higher voltage applications, multiple diodes must be used in series, raising the problems of uniform voltage distribution ...