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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
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A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
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High Temperature Optoelectronics
SBC: ASTRALUX, INC. Topic: N/AThere are no commercial amplifiers that can operate at temperatures above 125 degrees Celsius. We will combine two comparable wide bandgap semiconducting materials to make electronic amplifiers and switches that operate at high temperatures (at least 500 degrees Celsius). These devices can be controlled remotely by a light beam. Hence wireless coupling to a room temperature macroprocessor is possi ...
SBIR Phase II 1993 Department of DefenseMissile Defense Agency -
Wide Bandgap Semiconductors for High-Temperature Electronics
SBC: ASTRALUX, INC. Topic: N/ATHIS PROJECT PROPOSES TO EXPLORE THE USE OF A WIDE BANDGAP SEMICONDUCTOR TO MAKE DEVICES CAPABLE OF OPERATING AT TEMPERATURES OF AT LEAST 500 0C. PN JUNCTIONS WILL BW FABRICATED. THE MAJOR THRUST WILL BE THE STUDY OF ELECTRODE TECHNOLOGY TO MAKE OHMIC CONTACTS THAT ARE STABLE AT HIGH TEMPERATURE AND IN THE PRESENCE OF AN ELECTRIC BIAS. THE APPROPRIATE METALLIZATION MUST RESIST BOTH THERMAL DIFFUSI ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
ECR-Ion Beam Deposition for III-Nitride Semiconductors
SBC: ASTRALUX, INC. Topic: N/AWE PROPOSE TO DEVELOP AND STUDY A NEW MANUFACTURING TECHNOLOGY FOR THE EPITAXIAL GROWTH OF MULTILAYERS OF III-NITRIDES SEMICONDUCTORS (GaN AND AlGaN) AT TEMPERATURES SUBSTANTIALLY LOWER THAN PRESENTLY ACHIEVED. THE TECHNIQUE IS BASED ON THE ION BEAM DEPOSITION SYSTEM WHERE THE IONS ARE GENERATED BY AN ELECTRON CYCLOTRON RESONANCE (ECR) MICROWAVE PLASMA. THE ENERGY OF THE IONS INCIDENT ON THE SUBST ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Rare Earth Doped III-V Semiconductor for Optoelectronics
SBC: ASTRALUX, INC. Topic: N/ATHE PROPOSED RESEARCH AND DEVELOPMENT EFFORT WILL EXPLORE THE ELECTROLUMINESCENCE PROPERTIES OF RARE EARTH ELEMENTS IN A III-V SEMICONDUCTOR. THE TECHNIQUE OF IMPACT EXCITATION, CURRENTLY USED IN COMMERCIALLY AVAILABLE ELECTROLUMINESCENCE DISPLAY DEVICES, WILL BE STUDIED FOR EXCITING THE RARE EARTHS. WE HAVE ALREADY DEMONSTRATED THE POSSIBILITY OF GENERATING VISIBLE LIGHT BY HOT ELECTRON IMPACT EX ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Biotechnology Applied Nanostructures
SBC: ASTRALUX, INC. Topic: N/AN/A
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Ferroelectric Thin Films For Nonvolatile Memory Applications
SBC: Ceram, Inc. Topic: N/AIT IS WELL KNOWN THAT FATIGUE OF FERROELECTRIC THIN FILMS WAS REDUCED SIGNIFICANTLY SINCE CERAMIC ELECTRODES SUCH AS RuO(x) WERE DEVELOPED. IT IS, HOWEVER, REALIZED THAT HIGH LEAKAGE CURRENT WITH EARLIER ELECTRICAL DEGRADATION AND POOR RETENTION PROPERTIES ARE STILL PROBLEMS THAT NEED TO BE SOLVED FOR COMMERCIAL MEMORY APPLICATIONS. A FAST POLARIZATION DECAY OCCURS AT THE INITIAL STAGE OF RETENTIO ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Spray Cooling Of High-power Semiconductor Laser Diodes
SBC: ISOTHERMAL SYSTEMS RESEARCH Topic: N/ATHE CURRENT DEVELOPMENT OF HIGH PERFORMANCE LASER DIODES TO BE USED IN DEFENSE, SUPER COMPUTERS, TELECOMMUNICATIONS, AND MEDICINE HAS INTRODUCED A NEED FOR A RADICAL CHANGE IN THE APPROACH OF LASER DIODE/OPTICS THERMAL MANAGEMENT. IN LASER DIODE ARRAYS, INTEGRATED CIRCUITS MOUNTED TOGETHER ON A SINGLE SUBSTRATE TO FORM ONE LEVEL PACKAGE ALLOW HIGHER LASER INTENSITIES, VARIED FREQUENCIES AT ENORMOU ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Optical "Bond Pads" For Silicon VLSI
SBC: Displaytech Incorporated Topic: N/AWE PROPOSE A NOVEL METHOD FOR PROVIDING OPTICAL MODULATOR PADS ON SILICON VLST CIRCUITS. OUR TECHNIQUE SHOULD ENABLE MODULATOR PAD ARRAYS OF NEARLY ARBITRARY CONFIGURATION, WITH MINIMUM PAD GEOMETRIES OF A FEW MICRONS SQUARE. MODULATOR RESPONSE TIMES LESS THAN 1 ns SHOULD BE ACHIEVED. THE TECHNIQUE REQUIRES ONLY A FEW PROCESS STEPS AND WILL WORK ON CIRCUITS MADE IN ANY STANDARD VLSI PROCESS.
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Correct Distributed Simulation Protocol
SBC: Geodynamics Topic: N/ATHE CORRECT DISTRIBUTED SIMULATION PROTOCOL (CDSP) IS A UNIQUE AND INNOVATIVE PROTOCOL THAT DIRECTLY ADDRESSES A NEED IN THE EMERGING TECHNOLOGY OF DISTRIBUTED SIMULATIONS. DISTRIBUTED TRAINING SIMULATIONS (SIMNET, DSI) DO NOT, AND ARE NOT REQUIRED TO PRODUCE CORRECT RESULTS. THEY NEED ONLY PROVIDE REALISTIC CUES. HOWEVERT, WHEN DISTRIBUTED SIMULATIONS ARE USED FOR ANALYSIS PURPOSES; FOR EXAMPLE, ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Nanophase Metal Oxides for Electroceramic Sensor
SBC: Nanophase Technologies Corp Topic: N/AMANY OF THE COMMERCIAL SENSORS IN USE (OR UNDER DEVELOPMENT) ARE BASED IN METAL-OXIDE CERAMIC MATERIALS. METAL-OXIDES OFFER SPECIAL ADVANTAGES BECAUSE OF THEIR CHEMICAL AND THERMAL STABILITY, FAST RESPONSE TIMES, AND SENSITIVITY TO ELECTROCHEMICAL CHANGES. THERE ARE REPORTED CASES THAT SHOW ADSORPTION OF WATER IN METAL OXIDES OFTEN ENHANCING BOTH THE SURFACE CONDUCTIVITY AND DIELECTRIC PROPERTIES ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency