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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Compact, High Power Microwave Amplifier

    SBC: Advanced Energy Systems, Inc            Topic: N/A

    "High power microwave (HPM) sources have important potential application in a variety of military and non-military areas. One of the key stepping stones to reaching many of these applications is the development of a source capable of gigawatt level poweroutput in a microsecond long pulse at a reasonable repetition rate. In addition, it would be highly desirable if this source were reasonably com ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  2. Laser Refrigerator

    SBC: ADVANCED REFRIGERATION TECHNOLOGIES, INC            Topic: N/A

    "MEMS (micro electro-mechanical systems) market was supposed to make the breakthrough in miniaturization. In practice, they are limited in power and so are reduced to very simple optical uses. With this engine, a new world of applications will be availablein the defense, space, communication and medical industries.We propose an engine 1,000X faster; smaller; and more powerful than electrically pow ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  3. Low Temperature Fabrication of Integrated Large-Area MEMS Devices on Flexible Substrates

    SBC: Anvik Corporation            Topic: N/A

    "The integration of large-area MEMS devices with electronic circuitry promises to deliver significant benefits, such as reduction of device size, increased sensor sensitivities, and reduced fabrication costs. Further, the use of flexible substratesprovides additional benefits in improved environmental performance, conformability, and lower fabrication costs. The applications of an integrated lar ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  4. CURVED FOCAL PLANE ARRAYS (FPAs) FOR VERY-WIDE FIELD-OF-VIEW STARING INFRARED DETECTION SYSTEMS

    SBC: Anvik Corporation            Topic: N/A

    "The proliferation of weapons of mass destruction and the ballistic and cruise missiles that could deliver them pose a direct and immediate threat to the security of U.S. The capability to defend against an attacking missile in the boost, midcourse, anddescent phase increases the chances that the missile and its payload will be destroyed. Given the prominent heat signature of ballistic missiles, i ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  5. A Superior High Dielectric Constant Capacitor with Nickel Electrodes for Use in Integrated Circuits

    SBC: Applied Ceramics Research Co.            Topic: N/A

    "The use of high dielectric constant materials in semiconductor integrated circuits is greatly expanded due to their obvious advantage of providing higher capacitance per unit area compared to the more conventional silicon oxide/silicon nitride capacitors.There are at least three general areas where these are needed: 1) DRAM memory cells, 2) smart card storage capacitors and 3) decoupling capacito ...

    SBIR Phase II 2002 Department of DefenseMissile Defense Agency
  6. PHOTO-ASSISTED EPITAXY OF WURTZITE GAN

    SBC: ASTRALUX, INC.            Topic: N/A

    "This work proposes to develop innovative methods to use photo-assisted epitaxial growth for GaN in order to reduce the defects that limit device performance. Light can interact with the surface of the substrate and nucleation layer to influence the growthtoward greater perfection. Several mechanisms can be investigated where incident illumination has the potential to reduce the defect density. ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  7. Large-area and low-cost hybrid SIC wafers

    SBC: ASTRALUX, INC.            Topic: N/A

    "Researchers at Astralux, Inc. in collaboration with Sterling Semiconductor, EMCORE Corp. and the University of Colorado at Boulder propose to develop hybrid SiC wafers using a novel technique. Specifically, our goal is to commercialize epi-ready 3-inchand 4-inch 4H and 6H SiC wafers for the emerging wide bandgap microwave device market. Our hybrid SiC wafers are complementary to the existing bu ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  8. Large-area and low-cost hybrid SIC wafers

    SBC: ASTRALUX, INC.            Topic: N/A

    "Researchers at Astralux, Inc. in collaboration with Sterling Semiconductor, EMCORE Corp. and the University of Colorado at Boulder propose to develop hybrid SiC wafers using a novel technique. Specifically, our goal is to commercialize epi-ready 3-inchand 4-inch 4H and 6H SiC wafers for the emerging wide bandgap microwave device market. Our hybrid SiC wafers are complementary to the existing bu ...

    SBIR Phase II 2002 Department of DefenseMissile Defense Agency
  9. High power SiC transistors for superior X-band radar

    SBC: ASTRALUX, INC.            Topic: N/A

    "Astralux, Inc. proposes to develop a new high-power SiC bipolar junction transistor (BJT) operating at ten times higher power density and five times higher efficiency compared to conventional power transistors. This new technology will enable truebroadband (3-10GHz) ultra-linear power amplifiers and superior T/R modules for use in radar, satellite communication and other wireless systems. The B ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  10. Combinatorial Approach to Improved P-Type Contacts via Optimal Molecular Doping

    SBC: ASTRALUX, INC.            Topic: N/A

    "Astralux, Inc. proposes to develop a novel and enabling p-type doping technology for the III-V nitrides with significant applications in the electronic and optoelectronic device arenas. Specifically, we will use molecular doping of magnesium (Mg) andoxygen (O) by ion implantation to improve upon the existing p-type doping technology, with the goal of significantly enhancing the dopant solubility ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency

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