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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. High Temperature Optoelectronics

    SBC: ASTRALUX, INC.            Topic: N/A

    There are no commercial amplifiers that can operate at temperatures above 125 degrees Celsius. We will combine two comparable wide bandgap semiconducting materials to make electronic amplifiers and switches that operate at high temperatures (at least 500 degrees Celsius). These devices can be controlled remotely by a light beam. Hence wireless coupling to a room temperature macroprocessor is possi ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  2. Wide Bandgap Semiconductors for High-Temperature Electronics

    SBC: ASTRALUX, INC.            Topic: N/A

    THIS PROJECT PROPOSES TO EXPLORE THE USE OF A WIDE BANDGAP SEMICONDUCTOR TO MAKE DEVICES CAPABLE OF OPERATING AT TEMPERATURES OF AT LEAST 500 0C. PN JUNCTIONS WILL BW FABRICATED. THE MAJOR THRUST WILL BE THE STUDY OF ELECTRODE TECHNOLOGY TO MAKE OHMIC CONTACTS THAT ARE STABLE AT HIGH TEMPERATURE AND IN THE PRESENCE OF AN ELECTRIC BIAS. THE APPROPRIATE METALLIZATION MUST RESIST BOTH THERMAL DIFFUSI ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  3. ECR-Ion Beam Deposition for III-Nitride Semiconductors

    SBC: ASTRALUX, INC.            Topic: N/A

    WE PROPOSE TO DEVELOP AND STUDY A NEW MANUFACTURING TECHNOLOGY FOR THE EPITAXIAL GROWTH OF MULTILAYERS OF III-NITRIDES SEMICONDUCTORS (GaN AND AlGaN) AT TEMPERATURES SUBSTANTIALLY LOWER THAN PRESENTLY ACHIEVED. THE TECHNIQUE IS BASED ON THE ION BEAM DEPOSITION SYSTEM WHERE THE IONS ARE GENERATED BY AN ELECTRON CYCLOTRON RESONANCE (ECR) MICROWAVE PLASMA. THE ENERGY OF THE IONS INCIDENT ON THE SUBST ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  4. Rare Earth Doped III-V Semiconductor for Optoelectronics

    SBC: ASTRALUX, INC.            Topic: N/A

    THE PROPOSED RESEARCH AND DEVELOPMENT EFFORT WILL EXPLORE THE ELECTROLUMINESCENCE PROPERTIES OF RARE EARTH ELEMENTS IN A III-V SEMICONDUCTOR. THE TECHNIQUE OF IMPACT EXCITATION, CURRENTLY USED IN COMMERCIALLY AVAILABLE ELECTROLUMINESCENCE DISPLAY DEVICES, WILL BE STUDIED FOR EXCITING THE RARE EARTHS. WE HAVE ALREADY DEMONSTRATED THE POSSIBILITY OF GENERATING VISIBLE LIGHT BY HOT ELECTRON IMPACT EX ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  5. Biotechnology Applied Nanostructures

    SBC: ASTRALUX, INC.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  6. Optical Time Division System to Replace Standard Matrix Switching

    SBC: Bbt Tech            Topic: N/A

    THIS PROPOSAL ENCOMPASSES A NEW TECHNOLOGICAL IDEA. THIS IDEA IS BASED ON A PATENTED WORKING OPTICAL BACKPLANE TECHNOLOGY WITHOUT FIBEROPTICS. PROJECT ENGINEERS THROUGHOUT THE U.S. HAVE LONG SOUGHT AFTER A REPLACEMENT FOR COMPLEX, UNRELIABLE MATRIX SWITCHING. THIS TECHNOLOGY ELIMINATES ALL RELAY MATRICES AND CMOS INTEGRATED CIRCUITS. THESE DEVICES ARE CURRENTLY USED FOR BOTH SWITCHING ANALOG SIGNA ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  7. Organometallic Monomer Precursors and Intrafilm Annealing for a LiNbO3 Crystal Film Production

    SBC: BELTRAN, INC.            Topic: N/A

    A feasibility study of a new route to the formation of crystalline films of the ferroelectric LiNbO3 is proposed. Two aspects of the proposed route are unique in themselves and, combined, should permit the development of a low temperature, scalable production process, to make electronic grade LiNbO3 more widely available to the integrated circuit (IC) industry. Preparation and reaction of novel vo ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  8. Ferroelectric Thin Films For Nonvolatile Memory Applications

    SBC: Ceram, Inc.            Topic: N/A

    IT IS WELL KNOWN THAT FATIGUE OF FERROELECTRIC THIN FILMS WAS REDUCED SIGNIFICANTLY SINCE CERAMIC ELECTRODES SUCH AS RuO(x) WERE DEVELOPED. IT IS, HOWEVER, REALIZED THAT HIGH LEAKAGE CURRENT WITH EARLIER ELECTRICAL DEGRADATION AND POOR RETENTION PROPERTIES ARE STILL PROBLEMS THAT NEED TO BE SOLVED FOR COMMERCIAL MEMORY APPLICATIONS. A FAST POLARIZATION DECAY OCCURS AT THE INITIAL STAGE OF RETENTIO ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  9. 4H-Silicon Carbide for High Temperature Power MOSFETs

    SBC: CREE RESEARCH, INC.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  10. Optical "Bond Pads" For Silicon VLSI

    SBC: Displaytech Incorporated            Topic: N/A

    WE PROPOSE A NOVEL METHOD FOR PROVIDING OPTICAL MODULATOR PADS ON SILICON VLST CIRCUITS. OUR TECHNIQUE SHOULD ENABLE MODULATOR PAD ARRAYS OF NEARLY ARBITRARY CONFIGURATION, WITH MINIMUM PAD GEOMETRIES OF A FEW MICRONS SQUARE. MODULATOR RESPONSE TIMES LESS THAN 1 ns SHOULD BE ACHIEVED. THE TECHNIQUE REQUIRES ONLY A FEW PROCESS STEPS AND WILL WORK ON CIRCUITS MADE IN ANY STANDARD VLSI PROCESS.

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency

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