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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Biotechnology Applied Nanostructures

    SBC: ASTRALUX, INC.            Topic: N/A

    WE PROPOSE TO APPLY A BIOTECHNOLOGY-BASED PROCESS TO MAKE NANOSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS. THE RESULT WILL BE A UNIFORM ARRAY OF SILICON QUANTUM BOXES OF IDENTICAL DIMENSIONS IN A SILICON LAYER OF CONTROLLED THICKNESS. ALL THREE TECHNIQUES, CONTROLLED THICKNESS OF A CRYSTALLINE Si LAYER, FORMATION OF A UNIFORM ARRAY, AND ITS USE AS A PATTERN FOR REPLICATING A SEMICONDUCTOR ARRAY, HA ...

    SBIR Phase II 1994 Department of DefenseMissile Defense Agency
  2. GROWTH OF GAN SINGLE-CRYSTAL BOULES

    SBC: ASTRALUX, INC.            Topic: N/A

    The proposed project will produce single-crystal boules of GaN that can be sliced and sold as high-quality substrates for the epitaxial growth of differently-doped GaN or of other lattice-matching crystals, or as wafers for use in optoelectronic and acoustooptic applications. The feasibility of GaN boules will be tested on a small scale: to produce cm3-sized crystals. The process will be scles up ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  3. SOLAR-BLIND GAN/ALN UV AND VUV SENSOR

    SBC: ASTRALUX, INC.            Topic: N/A

    Astralux, Inc. will develolp a seminconductor sensor sensitive to bacuum ultraviolet photons. For this, we shall synthesize a wide bandgap semiconductor capable of forming a built-in electric field that will separate the photogenerated electron-hole pairs and produce a photovoltage in response to the incident UV. This sensor should have no response to light in the visible spectrum. In this project ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  4. DIAMOND-BASED THERMAL SENSORY ELEMENT

    SBC: ASTRALUX, INC.            Topic: N/A

    There is a market for a room temperature infrared detector as well as for a detection system which is radiation resistant and works at high temperatures and in reactive environments. Current infrared imaging technologies are too expensive and too bulky for these applications. We are proposing to develop an infrared and thermal detector based on a novel kind of light converter. The concept incorpor ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  5. CALIBRATIONS OF IR, VISIBLE, AND ULTRAVIOLET SENSORS

    SBC: Boulder Metric, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  6. INTELLIGENT OPTICAL FIBER RECEIVER

    SBC: EAGLE RESEARCH AND DEVELOPMENT, LLC            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  7. LIFETIME MEASUREMENTS FOR ROUTINE QUALITY CONTROL/ASSESSMENT OF SEMICONDUCTOR WAFERS

    SBC: INTERFACE STUDIES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  8. LARGE AREA NON-CONTAMINATING HIGH FLUX ATOMIC HYDROGEN SOURCE

    SBC: IONWERKS INC            Topic: N/A

    A new approach to generating atomic hydrogen (and possibly N and O) will give atomic fluxes of 10(-19) atoms/cm(-2) over a three inch wafer positioned three inches in front of the source. Scalt up to larger areas may be possible in phase II. We will examine the use of this source as an alternative to hot filament assisted generation of atomic H for diamond thin film growth. Use of the source for M ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  9. GROWTH OF LATTICE MATCHED GAN/INGAN/ZNO IN A MBE/CBE CHAMBER OPTIMIZED FOR HIGH TEMPERATURE WIDE BANDGAP NITRIDE GROWTH

    SBC: IONWERKS INC            Topic: N/A

    Ionwerks has begun an internally funded project to design and manufacture an MBE growth chamber specifically designed and optimized for wide bandgap nitrides (compatible with Si/Ge growth also). This chamber will include two proprietary growth techniques which we have found to be crucial for formation of cBN thin films. Design and construction of this chamber is underway. We will use this equipmen ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  10. BONDING OF STRUCTURAL CERAMIC MATERIALS WITH PRECERAMIC POLYMERS

    SBC: HYBRID TECHNOLOGIES            Topic: N/A

    The development of novel bonding materials is of great importance to the fabrication of complex ceramic shapes whose machining is eith impossible or too expensive. In Phase I, Laser Photonic Technology, inc. proposes to explore the use of polymer precursors to silicon carbide, silicon nitride, and alumina, as "glues" to develop cost-effective methods of bonding advanced ceramic materials to each o ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
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