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The Award database is continually updated throughout the year. As a result, data for the given year is not complete until April of the following year. Annual Reports data is a snapshot of agency reported information for that year and hence might look different from the live data in the Awards Information charts.

  1. Si-CeO2 Silicon-On-Insulator Device Structure Grown by Laser Assisted Molecular Beam Deposition

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Laser Assisted Molecular Beam Deposition (LAMBD) process for the growth of single crystal lattice matched CeO2 thin films on a Si substrate and thin film Si on CeO2 for the development and commercialization of silicon-on-insulator (SOI) devices and potentially Si based optoelectronic devices. CeO2 is nearly lattice matched to Si (0.35% rnismatched), which ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Pulsed Arc Molecular Beam Film and Powder Production System

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Pulsed Arc Molecular Beam Processing (PAMBP) process which can be used to produce high quality and high purity thin films as well as nanopowders. The PAMBP source uses a pulsed valve to generate gas pulses between two electrodes. During the gas pulse, an electric discharge is struck between the electrodes causing ablation of the cathode material. The ablat ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Submicron-Resolution, Large-Area, High-Throughput Patterning System for Electronic Modules

    SBC: Anvik Corporation            Topic: N/A

    This proposal presents a program for developing a novel patterning system technology that not only delivers submicron resolution over a large image field, but also produces high exposure throughput and eliminates the shortcomings of conventional systems. The new technology is highly attractive in the fabrication of semiconductor integrated circuits and flat-panel displays. Phase I will design a sy ...

    SBIR Phase II 1997 Department of DefenseMissile Defense Agency
  4. High Quality Bulk GaN Crystal Growth

    SBC: Crystal Systems, Inc.            Topic: N/A

    Crystal Systems proposes in Phase I to carry out research which will establish a scientific basis for growth of high quality GaN single crystals. This will form the basis for Phase II research and development leading to the growth of large high quality GaN boules (and possibly A N boules) and 4" wafers. There is a strong need for GaN devices in the military and the potential for extensive commerci ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Cryogenic Variable Conductance Heat Pipe

    SBC: ETA,llc            Topic: N/A

    Our proposed innovation advocates the use of well-known variable conductance heat pipe (VCHP) technology for cryogenic applications where temperature control of sensitive components is also required. IR sensors operating at cryogenic temperatures frequently require temperature control to plus or minus 1.0 degrees C while some applications demand finer control down to pluse or minus 0.1 degrees C. ...

    SBIR Phase II 1997 Department of DefenseMissile Defense Agency
  6. Multi-Evaporator Heat Pipe Network for Cryogenic Sensor Cooling

    SBC: ETA,llc            Topic: N/A

    Current thermal management systems for satellite infrared detectors employ heat pipe thermal diodes or thermal switches to couple primary and redundant mechanical cryocoolers to just a single sensor. With today's trend toward more but smaller sensors per satellite, these systems can become quite large, heavy, power hungry and expensive. Our innovation allows many sensors to be cooled with just one ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. Molecular Beam Epitaxial Growth and Characterization of Novel VCSELs at 1.55 micron

    SBC: EPITAXIAL LABORATORY INC            Topic: N/A

    The vertical-cavity-surface-emitting laser(VCSEL) which operate at 1.55 or 1.3 um has been recognized as a key device in optical interconnection systems and parallel optical processing. However, the realization of these long-wavelength VCSELs with a low threshold current has long been delayed due to the absence of a highly-reflective distributed Bragg reflector(DBR). A DBR reflectivity exceeding 9 ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. High Resolution Holographic Target Tracking Sensor

    SBC: HOLOGRAPHIC OPTICS, INC.            Topic: N/A

    Optical and infrared sensors usually track the target by measuring the spatial position of a focal spot on the matrix of detectors. Range and resolution are dependent on the quality of the optics and on the complexity of the electronics (number of detectors in the matrix, their sensitivity etc). Cost is also related to these parameters and might increase exponentially with high performance systems ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. Subnanosecond Ultra-Low Power Consumption 3-Dimensional NbN RAM

    SBC: HYPRES, INC.            Topic: N/A

    Due to a number of physical restrictions, Random Access Memory based on silicon can not reach the performance level of superconductive devices. HYPRES proposes the two-phase development of a subnanosecond low-power memory. The principal problems in the development of such a memory have been: an exclusive focus on ac-driven latching logic, which requires very high value of AC control currents and c ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Chip-Levewl Doppler Laser Radar

    SBC: LIGHTWORKS, LLC            Topic: N/A

    Recent progress in self-mixing Doppler sensors have proven that measurement performance similar to that obtained with continuous-wave coherent laser radar is feasible, but with at least an order of magnitude less complexity and cost. We believe that extremely simple hardware signal processors can also be built as single chips, or at most a few chips. This points to the possibility of developing hi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency

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