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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Ferroelectric Capacitors for Pulse Power Electronics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    HIGH-DENSITY ENERGY STORAGE AND FAST DISCHARGE WILL BE CRITICAL IN A VARIETY OF HIGH POWER AEROSPACE APPLICATIONS. CAPACITORS ARE IDEAL FOR THESE PURPOSES, AS WELL AS FOR POWER CONDITIONING AND FILTERING. UNFORTUNATELY, BULK POWDER-BASED DIELECTRICS USED IN CAPACITORS HAVE SEVERE LIMITATIONS, ESPECIALLY THE HIGH NUMBER OF SHORT-INDUCING DEFECTS CAUSED BY POOR CONTROL OF MATERIAL PROPERTIES IN CERA ...

    SBIR Phase II 1997 Department of DefenseMissile Defense Agency
  2. Multiple Rectangular Discharge CO2 Laser

    SBC: Qsource, Inc.            Topic: N/A

    An innovative discharge geometry for a very compact, area cooled, high average power CO2 laser employing a two mirror, waveguide-stable optical cavity is proposed. The specific Phase I result sought is the generation of an average CO2 output power of 1 W/cm2 of wall cooling area in a geometry that has a total cooling area of 140 cm2. A lightweight CO2 amplifier version of a future Phase II devic ...

    SBIR Phase II 1997 Department of DefenseMissile Defense Agency
  3. HIGH TEMPERATURE SUPERCONDUCTING JOSEPHSON JUNCTIONS ON SILICON SUBSTRATES FOR RF COMMUNICATIONS

    SBC: ADVANCED FUEL RESEARCH, INC.            Topic: N/A

    We propose to develop manufacturable high-temperature superconducting (HTS) Josephson junctions on silicon substrates. This technology will make available a wide range of silicon fabrication methods, allowing superconducting and semiconducting circuit elements on the same chip. The ultimate goal is to provide high performance monolithic rf components combining active and passive superconducting co ...

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency
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