You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Development of Novel RAD-Hard ASICs and a Modular Design Methodology Using Asynchronous Architectures

    SBC: NANOMATRONIX LLC            Topic: MDA18007

    The NMT/UA team propose to develop a radiation-hardened, low power, and highly robust delay-insensitive asynchronous circuit design methodology in 90nm technology, prototyped by designing a SET/SEL/SEU immune asynchronous microcontroller test chip (PIC 16C57, for example).The proposed Phase 1 SBIR effort will focus on design, simulation, prototyping and demonstration of the key functional blocks o ...

    SBIR Phase I 2018 Department of DefenseMissile Defense Agency
  2. A new THz-to-millimeter-wave source

    SBC: ArkLight            Topic: N/A

    "This SBIR Phase I project focuses on the implementation of a new THz module that can emit coherent and tunable THz waves. Recently, coherent THz radiation was generated at room temperature by PI, with a tuning range of 56.8-1618 ¿m (5.27 - 0.18 THz), inGaSe based on difference-frequency generation. The peak THz power can be as high as 69.4 W at 196 ¿m. The corresponding photon conversion effici ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  3. Development of an Isotropic Etching Method of Surface Preparation of SiC

    SBC: BANDGAP TECHNOLOGIES, INC.            Topic: N/A

    "This Phase I SBIR program is aimed at demonstrating the principle of an approach for the surface preparation of SiC wafers comparable or superior to chemo-mechanical polishing. In the Phase I program, surface preparation of 4H-SiC wafers 50 mm (2 inches)in diameter will be demonstrated. Also in Phase I, the prepared (treated) surface of the SiC wafer will be characterized for average surface ro ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  4. An Approach for the Growth of Long Silicon Carbide Boules

    SBC: BANDGAP TECHNOLOGIES, INC.            Topic: N/A

    "This Phase I program is aimed at demonstrating the principle of an approach for the growth of 4H-SiC boules 50 mm in diameter but of length equal to 50 mm, which is approximately twice the length of boules grown by convential approaches. Also in Phase I,the grown boules will be sliced into wafers, lapped, and polished; the polished wafers will be characterized for structural properties; comparis ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  5. Strain-Enhanced Tunnel Diode Technology

    SBC: Belford Research, Inc.            Topic: N/A

    "We intend to increase by an order of magnitude, the current density of silicon-based tunnel diodes. This increase directly relates to a corresponding increase in performance (speed). Apart from being the fastest of all microelectronic devices, tunneldiodes (TDs) have negative differential resistance, which gives them unusual circuit qualities. When attached to integrated circuits they improve the ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  6. Germanium-Free Strained-SOI Wafers

    SBC: Belford Research, Inc.            Topic: N/A

    "We propose to combine the technologies of SOI manufacture with strain-inducing wafer bonding to produce Strained-Si On Insulator (SSOI) wafers. Optimizing this new Strained-Silicon-on-Insulator will increase carrier mobilities by a factor of at least x3,lower the band gap by 20%, and reduce operating power of existing technologies by a factor of x4. The above performance enhancements are over and ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  7. Improved Temperature Measurement for High Yield Manufacturing

    SBC: Bellwether Instr., LLC            Topic: N/A

    "Bellwether proposed the development of an improved emissivity compensating pyrometer (ECP). This improved pyrometer will have advantages over conventional pyrometers including fewer measurement artifacts. Furthermore, the instrument will be initiallydeveloped for use with GaN processes, used for high power FET's and solar blind detectors. Improved process temperature measurement will lead to f ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  8. Advanced Turbo-generators for 1-1000 kW Variable-load Aero-Missions

    SBC: DOTY SCIENTIFIC, INC.            Topic: N/A

    "Preliminary analysis and simulations show a novel, recuperated, open Brayton cycle gas turbine should achieve system specific mass (including the generator and power conditioning) below 5 kg/kWE and efficiency of 35-50% over the range of 1-1000 kW withextremely low thermal and acoustic signatures at altitudes from sea level to 14 km. The dual-spindle compressor will enable high efficiency over a ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  9. Stealthy, Efficient, Light-Weight, JP-8 Fueled Hybrid Electric Propulsion System for UAVs

    SBC: D-Star Engineering Corporation            Topic: N/A

    "During successful development of small diesel engines and generator sets for the Army, DARPA, NASA and others, D-STAR has developed useful experience and technologies for small, compact, light-weight, high-speed diesel engines and power systems. DuringPhase I of the proposed effort, D-STAR will explore development of a JP-8 fueled hybrid diesel electric propulsion system for use on small unmanne ...

    SBIR Phase I 2002 Department of DefenseDefense Advanced Research Projects Agency
  10. Extremely Rapid Thermal Processing Demonstrations for Advanced Microelectronics

    SBC: Jetek, Inc.            Topic: N/A

    "The ITRS 2000 defined Rapid Thermal Processing (RTP) with very low thermal budget as a barrier with no known solutions below the 70nm node. Solutions must be found to enable very shallow, very high conductivity single crystal structures in silicon andnon-silicon materials. In a Phase I contract, JETEK assessed the feasibility of a revolutionary concept for achieving significant RTP performance ...

    SBIR Phase I 2002 Department of DefenseDefense Advanced Research Projects Agency
US Flag An Official Website of the United States Government