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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Development of Novel RAD-Hard ASICs and a Modular Design Methodology Using Asynchronous Architectures
SBC: NANOMATRONIX LLC Topic: MDA18007The NMT/UA team propose to develop a radiation-hardened, low power, and highly robust delay-insensitive asynchronous circuit design methodology in 90nm technology, prototyped by designing a SET/SEL/SEU immune asynchronous microcontroller test chip (PIC 16C57, for example).The proposed Phase 1 SBIR effort will focus on design, simulation, prototyping and demonstration of the key functional blocks o ...
SBIR Phase I 2018 Department of DefenseMissile Defense Agency -
Ferroelectric Capacitors for Pulse Power Electronics
SBC: Advanced Technologies/Laboratories Intl Topic: N/AHIGH-DENSITY ENERGY STORAGE AND FAST DISCHARGE WILL BE CRITICAL IN A VARIETY OF HIGH POWER AEROSPACE APPLICATIONS. CAPACITORS ARE IDEAL FOR THESE PURPOSES, AS WELL AS FOR POWER CONDITIONING AND FILTERING. UNFORTUNATELY, BULK POWDER-BASED DIELECTRICS USED IN CAPACITORS HAVE SEVERE LIMITATIONS, ESPECIALLY THE HIGH NUMBER OF SHORT-INDUCING DEFECTS CAUSED BY POOR CONTROL OF MATERIAL PROPERTIES IN CERA ...
SBIR Phase II 1997 Department of DefenseMissile Defense Agency -
Blue-Green LED Arrays for Scanned Linear Array Imaging
SBC: Advanced Technologies/Laboratories Intl Topic: N/AVirtual displays have tremendous potential in defense applications such as virtual reality training, battlefield support, and information systems. Full color displays require red, blue, and green LED arrays of which only red is commercially available. This program teams ATMI, a recognized leader in the GaN growth community, with Reflection Technology, a leader in virtual display technology. ATMI w ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
High Dielectric MOSFET Oxides on SiC
SBC: Advanced Technologies/Laboratories Intl Topic: N/AIncreasing thermal and power loads in circuitry demand electrical components which can operate at temperatures up to 400 C and beyond . A combination of high bandgap semiconductors and improved dielectrics is needed to solve this problem. ATMI has maj or programs in production of both SiC/GaN semiconductor materials and high dielectric constant complex oxide thin films, in particular barium stront ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Edge-emitting Nitride-based Bragg Reflector Lasers
SBC: Advanced Technologies/Laboratories Intl Topic: N/AIn this program we will develop narrow linewidth AlGaN Bragg reflector lasers suitable as injection seeds for solid-state W lasers in the range of 280 to 330 nm. These systems are compact, light weight, and low-power consuming and ideal for airborne lidar systems. Bragg reflector lasers have never been fabricated in the nitrides so in this Phase I program we will develop the technologies necessary ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Solar-blind GaN p-I-n UV Photodiodes
SBC: Advanced Technologies/Laboratories Intl Topic: N/APhotodiodes have high efficiency since the absorption region thickness is large. However, no GaN p-i-n photodiodes have been reported due to the difficulty in achieving low background doped GaN. This Phase I program seeks to determine the increase in quantum efficiency achievable by the use of a thick intrinsic layer inserted in the p-n junction to increase the absorption region thickness. In addi ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Epi-ready SiC Substrates
SBC: Advanced Technologies/Laboratories Intl Topic: N/ACommercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ sur ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Improved Silicon on Insulator (SOI) Manufacturing Technology for Low Power, High Speed, Radiation Hard Devices
SBC: ADVANCED FUEL RESEARCH, INC. Topic: N/ASOI technology offers the potential for creating radiation hard integrated circuits which can operate at low power and high speed. These advances are important for DoD and space applications and for battery operated devices. SOI is excellent for rad-hard applications because dielectric isolation of active circuitry from the supporting substrate by the Buried OXygen (BOX) layer enhances resistance ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Advanced Nickel-Metal Hydride Battery
SBC: Mobile Energy Products, Inc. Topic: N/AMany DOD systems employ rechargeable batteries to supply power. Battery weight, volume, cycle life and cost are generally limited considerations in enabling satisfactory mission performance. Systems presently utilize Lead-Acid, Nickel-Cadmium, Nickel-Metal Hydride or Lithium-Iobatteries. The Nickel-Metal Hydride (Ni-MN) system is now under study as a superior candidate for many applications. El ...
SBIR Phase II 1997 Department of DefenseOffice of the Secretary of Defense -
A Compact High Current Driver for Semiconductor Diode Lasers, Suitable for Laser Radar (LADR) Applications
SBC: Garron Instrument Engineering Topic: N/AA fast-pulsed (3-15ns FWHM) high-current (>500A) driver for high power diode lasers or laser arrays is proposed. Present high-current diode drivers typically use MOSFET switches to modulate the current. It is difficult to achieve very fast pulses with such devices because the inherent capacitance of the gate electrode cannot be charged and discharged quickly. Lower current, but faster diode driver ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency