Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Development of Novel RAD-Hard ASICs and a Modular Design Methodology Using Asynchronous Architectures

    SBC: Nanomatronix, LLC            Topic: MDA18007

    The NMT/UA team propose to develop a radiation-hardened, low power, and highly robust delay-insensitive asynchronous circuit design methodology in 90nm technology, prototyped by designing a SET/SEL/SEU immune asynchronous microcontroller test chip (PIC 16C57, for example).The proposed Phase 1 SBIR effort will focus on design, simulation, prototyping and demonstration of the key functional blocks o ...

    SBIR Phase I 2018 Department of DefenseMissile Defense Agency
  2. Structural Reactive Polymeric Materials

    SBC: Tetramer Technologies,L.L.C.            Topic: MDA15004

    Missiles produced with reactive materials can add chemical energy to the kinetic energy generated on impact with a target. Thus, reactive materials have potential to serve as structural components resulting in possible increase lethality without a weight impact. In Phase I, Tetramer will demonstrate a new material system with significantly stronger mechanical properties and excellent reactive prop ...

    SBIR Phase I 2016 Department of DefenseMissile Defense Agency
  3. Barium Titanate Formation for Electronic/Photonic Applications

    SBC: INTEGRAL WAVE TECHNOLOGIES            Topic: N/A

    Integral Wave Technologies (formerly known as Arkansas Microelectronic Development Corporation) proposes to develop a process for growing ferroelectric, polycrystalline barium titinate (BaTiO3) thin-films, by anodic oxidation of co-sputteredbarium-titanium films (BaTi). Though films of this nature find applications in several electrical devices, Integral Wave will utilize this novel technology, if ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  4. A Novel Approach for the Growth of Semi-Insulating Silicon Carbide

    SBC: BANDGAP TECHNOLOGIES, INC.            Topic: N/A

    The development of a process to produce semi-insulating (SI) silicon carbide (SiC) boules with improved yields will significantly reduce the cost of wafers and thus accelerate the rapid commercialization of SI SiC for microwave and RF system applications.The objective of this Phase II project is to improve and perfect the process development of a radically new approach for the synthesis of high pu ...

    SBIR Phase II 2001 Department of DefenseMissile Defense Agency
  5. Growth of Large Diameter Silicon Carbide Boules

    SBC: BANDGAP TECHNOLOGIES, INC.            Topic: N/A

    Absence of low defect density large diameter (~100mm) silicon carbide (SiC) wafers is a major barrier for the commercial production of SiC based devices. This phase I program is aimed at demonstrating a novel technique that will significantly reduce themechanical stress in SiC during boule growth. In phase I, we will demonstrate that by the proposed method, a significant reduction in the mechnic ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Off c-Axis Bulk Crystal Growth of Silicon Carbide

    SBC: BANDGAP TECHNOLOGIES, INC.            Topic: N/A

    This Phase I program is aimed at demonstrating the principle of off c-axis boule growth of 4H-SiC. In Phase I, using off-axis SiC seeds, we will demonstrate the growth of 4H-n SiC boules~15 mm long. Also in Phase I, we will slice the off-axis boules intowafers, lap and polish them, and perform structural and electrical characterization of the wafers. Comparisons will be made with on-axis wafers ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  7. A New Approach for the Growth of High Resistivity Silicon Carbide

    SBC: BANDGAP TECHNOLOGIES, INC.            Topic: N/A

    This Phase I program is aimed at demonstrating a novel SiC source material synthesis technique that will be used to grow high resistivity SiC. In this effort, we will demonstrate that the proposed source material synthesis technique will produce SiCstarting material that is far superior to presently used material in terms of purity and process time, and that the high purity source material can be ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  8. NEXT-AGAIN-GENERATION RADIATION HARD CMOS

    SBC: Belford Research, Inc.            Topic: N/A

    We proposed a simple wafer scale method to leap frog current CMOS technology. The slow-down in CMOS scaling is limited by technology difficulties and by economics. In tooling up for .13-micron technology, the jump from .18-micron is costing $10 billionis equipment alone, plus accompanying expenses of redesign and module formulation. The net effect of this massive capital investment is to replac ...

    SBIR Phase II 2001 Department of DefenseMissile Defense Agency
  9. Low Cost Fabrication of THAAD Heatshields Using Placed Fiber Manufacturing

    SBC: Fiber Materials, Inc.            Topic: N/A

    A program is proposed to investigate and demonstrate an innovative, low cost approach to the production of quartz/phenolic (Q/P) heatshields such as those presently used on the Theater High Altitude Area Defense (THAAD) System. These heatshields arecurrently fabricated with a tape wrap process using a woven quartz fabric impregnated with phenolic resin. Through the novel use of placed fiber tech ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  10. New Broad Band Rare-Earth-Doped Glasses For Optical Fiber Communications

    SBC: KIGRE, INC.            Topic: N/A

    Kigre has an idea and evidence for a new family of broadband glasses that break all of Zachariasen's standard accepted rules for glass formation. This family of glasses is based upon the extensive use of multiple glass formers such as SiO2, B2O3, La2O3and P2O5. By employing multiple glass formers in a laser glass, Kigre is able to expand the bandwidth without sacrificing cross section and gain. ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
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