You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Development of a Butanol Fuel Processor for Person-Portable Fuel Cell Power Systems

    SBC: FuelCell Energy, Inc.            Topic: A10AT009

    FuelCell Energy, Inc., in collaboration with the University of Minnesota, is proposing to develop an innovative fuel processor for person-portable fuel cell power system applications. The system will be designed to reform butanol into a hydrogen-rich stream suitable for use in a low-temperature Proton Exchange Membrane (PEM) fuel cell. The technical approach will focus on the development of a no ...

    STTR Phase I 2010 Department of DefenseArmy
  2. Random Number Generation for High Performance Computing

    SBC: Silicon Informatics, Inc.            Topic: A10AT012

    Highly scalable parallel random number generators (RNGs) will be developed, evaluated and implemented for use in high performance computing on thousands of multi-core processors and general purpose graphics processing units. The main contributions are: (a) design and implementation of new parallel test methods that capture the inter-stream correlations exhibited in practice and complement the curr ...

    STTR Phase I 2010 Department of DefenseArmy
  3. High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

    SBC: SVT ASSOCIATES INC            Topic: A05T008

    A new Aluminum gallium nitride (AlGaN) based heterojunction field-effect transistor (HFET) structure is proposed that utilizes avalanche impact ionization for very high frequency operation (>100 GHz). The main goal of this program is to demonstrate the potential of these devices as a replacement for vacuum tubes in mm-wave applications including radars and communications transmitters. In the Pha ...

    STTR Phase I 2005 Department of DefenseArmy
US Flag An Official Website of the United States Government