You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Random Number Generation for High Performance Computing

    SBC: Silicon Informatics, Inc.            Topic: A10AT012

    Highly scalable parallel random number generators (RNGs) will be developed, evaluated and implemented for use in high performance computing on thousands of multi-core processors and general purpose graphics processing units. The main contributions are: (a) design and implementation of new parallel test methods that capture the inter-stream correlations exhibited in practice and complement the curr ...

    STTR Phase I 2010 Department of DefenseArmy
  2. Development and flight test demonstration of an innovative practical Autonomous Formation Flying System (AFFS) for manned rotorcraft.

    SBC: Aerotonomy, Incorporated            Topic: A05T011

    Aerotonomy, Incorporated and our Research Institution partner the Georgia Institute of Technology (GIT) will combine an innovative adaptive guidance system, the latest knowledge in autonomous adaptive rotorcraft control, and intuitive pilot interface techniques to arrive at a safe, practical, Autonomous Formation Flying System (AFFS) for manned rotorcraft. This Phase I project will culminate in a ...

    STTR Phase I 2005 Department of DefenseArmy
  3. High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

    SBC: SVT ASSOCIATES INC            Topic: A05T008

    A new Aluminum gallium nitride (AlGaN) based heterojunction field-effect transistor (HFET) structure is proposed that utilizes avalanche impact ionization for very high frequency operation (>100 GHz). The main goal of this program is to demonstrate the potential of these devices as a replacement for vacuum tubes in mm-wave applications including radars and communications transmitters. In the Pha ...

    STTR Phase I 2005 Department of DefenseArmy
US Flag An Official Website of the United States Government