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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Novel Nanocoating technology for Functional Textile

    SBC: Claros Technologies Inc.            Topic: A18BT024

    Nanoparticles represent an attractive alternative in coating processes due to their functional versatility, including surface, optical, conductive and catalytic properties. However, current processes of coating textile products with nanoparticles results in rapid loss of the nanoparticles during laundering or use, leading to a significant decrease in product durability and functionality and increa ...

    STTR Phase I 2019 Department of DefenseArmy
  2. VANESSA: Virtual Analysis Networks and Explanations for Social Sensing Analysis

    SBC: Smart Information Flow Technologies, LLC            Topic: A18BT008

    SIFT, JHU medicine and University of Central Florida are proposing to develop VANESSA (Virtual Analysis Networks and Explanations for Social Sensing Analysis) - a social sensing platform providing team diagnostics of interacting teams and recommendations for enhanced team functioning of human and human-cyber teams. The overall goal of VANESSA is to develop an adaptive technology platform with a fo ...

    STTR Phase I 2019 Department of DefenseArmy
  3. Random Number Generation for High Performance Computing

    SBC: Silicon Informatics, Inc.            Topic: A10AT012

    Highly scalable parallel random number generators (RNGs) will be developed, evaluated and implemented for use in high performance computing on thousands of multi-core processors and general purpose graphics processing units. The main contributions are: (a) design and implementation of new parallel test methods that capture the inter-stream correlations exhibited in practice and complement the curr ...

    STTR Phase I 2010 Department of DefenseArmy
  4. High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

    SBC: SVT ASSOCIATES, INCORPORATED            Topic: A05T008

    A new Aluminum gallium nitride (AlGaN) based heterojunction field-effect transistor (HFET) structure is proposed that utilizes avalanche impact ionization for very high frequency operation (>100 GHz). The main goal of this program is to demonstrate the potential of these devices as a replacement for vacuum tubes in mm-wave applications including radars and communications transmitters. In the Pha ...

    STTR Phase I 2005 Department of DefenseArmy
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