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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. High Temperature (300 °C) Silicon Carbide (SiC)-Based Integrated Gate Drivers for Wide Bandgap Power Devices

    SBC: Arkansas Power Electronics International, Inc.            Topic: 08d

    SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Smaller switching and on-state losses coupled with higher voltage blocking capability, and especially its high operating temperature make SiC the ideal semiconductor for high performance, high power density power modules. One major factor limiting the switching speed, and thus power loss of these devices, ...

    SBIR Phase I 2013 Department of Energy
  2. Low Cost High Reproducibility Method for GaN Seed Production

    SBC: KYMA TECHNOLOGIES, INC.            Topic: 11a

    Although several critical energy saving technologies under development today require Gallium Nitride (GaN) based semiconductor devices, a source of high quality and inexpensive GaN wafers does not yet exist. This lack of GaN wafers adds complexity to GaN device production and makes development of new GaN device based products slower and more costly. Lowest cost, highest volume, wafer production a ...

    SBIR Phase I 2013 Department of Energy
  3. FLAAT Growth Technology for Low Cost Thick High Quality GaN on Thin 8 Sapphir

    SBC: KYMA TECHNOLOGIES, INC.            Topic: 11b

    Gallium Nitrides (GaN) device market size is second only to silicon and is projected to be $50-100 billion in size as markets mature for GaN power devices, solid state lighting, and hundreds of other new applications. Even with this remarkable forecast, GaN epitaxy is still produced primarily on foreign (non-GaN) substrates, typically sapphire, silicon, or silicon carbide, which cause billions of ...

    SBIR Phase I 2013 Department of Energy
  4. PRISMS- Profile Resolving In-Situ Soil Moisture Sensor

    SBC: TRANSCEND ENGINEERING AND TECHNOLOGY, LLC            Topic: 20a

    Many contaminated DOE sites are located in arid regions where depth to groundwater is significant and/or contaminants were discharged into a vadose zone through which transport to the groundwater table is dominated by unsteady, unsaturated groundwater flow. The absence of an effective means to monitor vadose zone moisture content in profile has been a persistent impediment to developing and calibr ...

    SBIR Phase I 2013 Department of Energy
  5. Variable Inlet Bypass for Efficient Wide Flow Range Turbocharger Compressor

    SBC: Concepts NREC, LLC            Topic: 06c

    Increased use of Exhaust Gas Recirculation (EGR) combined with engine downsizing has pushed automotive turbocharger compressor operation towards and often beyond its efficient and stable operating boundaries. Much of the drive cycle is spent operating the compressor at low flow rates and low pressure ratios, near the compressor surge line, in an area which is usually of low efficiency. Our prelimi ...

    SBIR Phase I 2013 Department of Energy
  6. PV Module. Title: Optimal Multijunction Solar Cells for CPV under Realistic Conditions.

    SBC: Black Hills Nanosystems            Topic: 05a

    The proposed DoE STTR project will provide a pathway for terrestrial CPV (500 to 700 Suns) multi- junction solar cells that will maintain extremely high efficiencies at realistic operating temperatures. The thrust of the proposed project will adapt an integration approach from MEMS to III-V materials grown lattice-matched to gallium arsenide substrates. The efficiency advantages were found to be s ...

    SBIR Phase I 2013 Department of Energy
  7. Multicomponent Nanomanufactured Drop-in Lubricant Technology for Enhancing Engine Friction Reduction

    SBC: NanoMech, Inc.            Topic: 06h

    The objective of this Phase I project is to demonstrate feasibility to design and develop novel nanomanufactured multicomponent lubricant additives applicable for engine, especially engineered as additive for enhancing engine economy with at least 3%. This economy will be enhanced through the power of nanosized multicomponent (multi-chemistry/macromolecular) lubricating agents launching into the i ...

    SBIR Phase I 2013 Department of Energy
  8. THREE-DIMENSIONAL HIGH-SPEED TOMOGRAPHY OF DENSE SPRAYS USING BALLISTIC IMAGING

    SBC: Taras Research, LLC            Topic: AF112167

    ABSTRACT: The primary objective of this research effort is to develop a next-generation time-gated ballistic imaging (BI) system for three-dimensional characterization of liquid breakup within dense fuel sprays. The temporal resolution will be varied using nonlinear time gating and pulse shaping techniques to optimize image contrast for a range of optical densities in sprays for propulsion appli ...

    SBIR Phase II 2013 Department of DefenseAir Force
  9. A Modular Miniature Satellite Laser Communications Transceiver

    SBC: Space Photonics, Inc.            Topic: AF01046

    ABSTRACT: The data transmission capacity required for fixed and tactical information networking continues to increase. Deploying traditional RF or microwave broadband direct line of sight (DLoS) links does not meet future warfighter needs. A key thrust for the Air Force (AF) is Assured Access Communications. This involves the pursuit of affordable low probability of intercept and detect (LPI/D ...

    SBIR Phase II 2013 Department of DefenseAir Force
  10. Design and Development of a Low Cost, Manufacturable High Voltage Power Module for Energy Storage Systems

    SBC: Arkansas Power Electronics International, Inc.            Topic: 08b

    Arkansas Power Electronics International, Inc. will design and develop a high performance, high voltage ( & gt; 15 kV) SiC MCPM that is low cost, manufacturable, reliable and reworkable. The target utility scale energy storage applications include power conversion systems for grid-tie, solar array, wind turbine, and vehicle-to-grid to aid in load leveling, frequency control, voltage fluctuations i ...

    SBIR Phase II 2013 Department of Energy
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