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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Real-Time Frequency-Selective Fading Channel Realization Generator

    SBC: WELKIN SCIENCES, LLC            Topic: DTRA122020

    During Phase I and a first Phase II, Welkin Sciences developed the Channel Realization Generator (CReG) algorithm, an enhanced functional replacement for the ACIRF code intended to be embedded into software link simulations and HWIL fading channel simulators. The proposed second Phase II effort will refine the CReG documentation and its software and firmware implementations. Many in the strategic ...

    SBIR Phase II 2018 Department of DefenseDefense Threat Reduction Agency
  2. Low Voltage Radiation Hardened Optoelectronics for Optical Interconnects

    SBC: Quanttera LLC            Topic: DTRA152001

    The Defense Threat Reduction Agency (DTRA) recognizes the need for low-power high-bandwidth radiation-hard optical interconnects to process more data more quickly and to replace electronic data.Our companys core development in optical communications with semiconductor materials is a unique fit for DTRAs low-power consumption high-bandwidth radiation-hard intra-chip communication components for sat ...

    SBIR Phase II 2018 Department of DefenseDefense Threat Reduction Agency
  3. Engineered Substrates for “Zero-Penalty” Radiation Hardening of Ultra Deep Submicron Commercial Processes

    SBC: RADIATION ASSURED DEVICES, INC.            Topic: DTRA08003

    In this proposed Phase II program we will build on the successful Phase I program where we for the first time implemented engineered epitaxial layers based on nanostructure technology that were used to harden commercial silicon devices against radiation by minimizing collected photocurrents (electron-hole pairs) via recombination centers where we demonstrated that improved radiation hardness could ...

    SBIR Phase II 2009 Department of DefenseDefense Threat Reduction Agency
  4. Engineering Models for Damage to Structural Components Subjected to Internal Blast Loading

    SBC: Thornton Tomasetti, Inc.            Topic: DTRA08006

    Weidlinger Associates Inc. proposes to develop effective technology for simulating explosive detonations within civil buildings where the propagation of airblast and failure of weak internal walls are strongly coupled. We will conduct a field test program designed to complement other internal detonation testing efforts such as DTRA''s Distinct Cobra, expanding the available database. We will perfo ...

    SBIR Phase II 2009 Department of DefenseDefense Threat Reduction Agency
  5. Novel Methods to Measure Penetrator Dynamics in Multi-Layer Geometries

    SBC: Thornton Tomasetti, Inc.            Topic: DTRA07011

    In Phase I of this effort we analyzed the structural response of a BLU 109 during typical penetration events. Based on these finite element results, we proposed and demsonstrated a simple robust concept for a passive penetrator sensor that identifies the material being penetrated and also correlates strongly with its underground trajectory. Such a sensor would obviously provide valuable informatio ...

    SBIR Phase II 2008 Department of DefenseDefense Threat Reduction Agency
  6. The Characterization and Mitigation of Single Event Effects in Ultra-Deep Submicron (< 90nm) Microelectronics

    SBC: Orora Design Technologies, Inc.            Topic: DTRA07005

    Orora Design Technologies proposes to develop electronic design automation (EDA) tools employing minimally invasive circuit design-based methods to mitigate single event effects (SEEs) for next generation Ultra-DSM CMOS (

    SBIR Phase II 2008 Department of DefenseDefense Threat Reduction Agency
  7. SEE Modeling and Mitigation in Ultra-Deep Submicron Microelectronics

    SBC: MICROELECTRONICS RESEARCH DEVELOPMENT CORPORATION            Topic: DTRA07005

    As technology feature sizes decrease, single event upset (SEU), digital single event transient (DSET), and multiple bit upset (MBU) effects dominate the radiation response of microcircuits. Recent test circuits and test methods have quantified the pulse widths of DSETs generated from heavy-ion strikes on critical microcircuit nodes. These pulse widths have proven to be much larger than previousl ...

    SBIR Phase II 2008 Department of DefenseDefense Threat Reduction Agency
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