Award Data

The Defense Threat Reduction Agency (DTRA) recognizes the need for low-power high-bandwidth radiation-hard optical interconnects to process more data more quickly and to replace electronic data.Our companys core development in optical communications with semiconductor materials is a unique fit for DTRAs low-power consumption high-bandwidth radiation-hard intra-chip communication components for sat ...

A significant performance gap exists between the theoretical number of Floating Point Operations (FLOPS) that a HPC machine is capable of sustaining and the number of FLOPS realized by real-world HPC applications. One of the principle reasons for this gap is the parasitic work that computational processes must do to communicate with one another. It has been shown that this communication work can b ...

GaN-based devices are currently grown on foreign substrates such as SiC and Al2O3, due to the lack of high quality GaN substrates. It is well known that the use of foreign substrates limits device performance due to a high dislocation density in the GaN film. Structured Materials Industries, Inc. (SMI) has developed a hybrid HVPE approach to grow high quality GaN device films. In this SBIR proj ...

Orora Design Technologies proposes to develop electronic design automation (EDA) tools employing minimally invasive circuit design-based methods to mitigate single event effects (SEEs) for next generation Ultra-DSM CMOS (

Radiation tolerant Field Programmable Gate Arrays (FPGA's) have gained wide and rapid acceptance by military and aerospace equipment suppliers; however, there are presently a limited number of chip-sets available for production. The lack of FPGA alternatives severely limits the range of available functions and applications that would greatly benefit from increased performance with radiation hardn ...

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Bipolar Junction Transistors (BJT) are used for power and mixed signal applications in radiation environments. Current BJT devices perform with volatile operation requiring constant power supply for uninterrupted access. We propose to create a nonvolatileBJT memoy device using proprietary SMI cerium based ferroelctric mterial (patent pending) prodced by Metal Organic Chemical Vapor Deposition (MOC ...