Award Data

The single most important type of metal/SiC junction is the n-type, rectifying Schottky diode, because it is the voltage blocking junction in all majority carrier devices. A reliable junction of this type for n-type SiC is the key to its development for high temperature, power conditioning electronics. Phase I will demonstrate that osmium is the ideal metal for forming such junctions. Phase II wil ...

A 3-DIMENSIONAL ATTITUDE SENSOR WHICH USES GPS CARRIER PHASEINTERFEROMETRY IS PROPOSED FOR ANALYSIS AND CONCEPT TESTING IN PHASE I, AND PROTOTYPING IN PHASE II. THE RESULTING SENSOR WILL BE ACCURATE AT ANY LATITUDE. ADROIT SYSTEMS PROPOSES TO ENHANCE ITS SUCCESSFUL 2-DIMENSIONAL, STATIC GPSATTITUDE DETERMINING SYSTEM (ADS) SO THAT IT WILL OPERATE UNDER DYNAMIC CONDITIONS WHILE MEASURING 3-DIMENSIO ...

EXPLOITATION IN MICROELECTRONICS OF THE VERY HIGH DIELECTRIC CONSTANTS OF FERROELECTRIC PEROVSKITES SUCH AS BATIO3 AND PZT HAS BEEN LIMITED BY MATERIALS PROCESSING AND COMPATIABILITY PROBLEMS. HIGH QUALITY FERROELECTRIC THIN FILMS HAVE NOT BEEN GROWN AT TEMPERATURES COMPATIABLE WITH STANDARD SI OR GAAS PROCESSING TECHNOLOGIES. A HUGE PAYOFF AWAITS ONE WHO CAN UNLOCK THE POTENTIAL OF FERROELECTRIC ...

MISSILE SEEKERS MUST DETECT TARGETS IN DUAL BANDS (3-5 UM AND 8-12 UM). THEY NOW USE HYBRID ASSEMBLY OF TWO SEPARATE ARRAYS, WHICH INCREASES THE POWER, CONSUMPTION, THE WEIGHT, AND THE COST. WE WILL DEVELOP MONOLITIHIC DUAL BAND 128X128 STARING ARRAYS ON HGCDTE MATERIAL. THE INNOVATION IS THE DETECTION OF BOTH LONG AND SHORT WAVE SIGNALS IN THE SAME PIXEL SIMULTANEOUSLY. FABRICATION METHODS ARE DE ...

APPLICATIONS OF HIGH-TEMPERATURE SUPERCONDUCTING MATERIALS TO TUNNELING DEVICES HAVE BEEN LIMITED BY FABRICATION PROBLEMS RELATED TO THE INTRINSIC ANISOTROPY OF THESE MATERIALS, TO THEIR EXTREMELY SHORT SUPERCONDUCTING COHERENCE LENGTH, AND TO THE POOR ELECTRICAL PROPERTIES OF THE NATIVE SURFACE OXIDE ON THE YBA2CUO7-X (YBCO) FAMILY OF HTSC MATERIALS. MAGNETIC FLUX-COUPLED SWITCHING DEVICES MAY BE ...

We propose to develop manufacturable high-temperature superconducting (HTS) Josephson junctions on silicon substrates. This technology will make available a wide range of silicon fabrication methods, allowing superconducting and semiconducting circuit elements on the same chip. The ultimate goal is to provide high performance monolithic rf components combining active and passive superconducting co ...

WE ARE DEVELOPING A MOLECULAR BEAM EPITAXY APPROACH TO GROW EPITAXIAL DIAMOND THIN FILMS FOR ELECTRONIC DEVICES. WITH HALOGEN ATOMS AND HALOCARBON FREE RADICALS TO CONTROL THE DEPOSITION WE WILL OVERCOME THE PROPENSITY OF TYPICAL DIAMOND DEPOSITION PROCESSES TO GROW 3-DIMENSIONAL MICRO-CRYSTALLINE FILMS. IT THIS PROJECT SUCCEEDS, WE WILL DEVELOP A HIGH-SPEEED AND/OR HIGH POWER ELECTRONIC DEVICE TE ...

VERTICAL CAVITY SURFACE EMITTING LASERS ARE UNDER DEVELOPMENT AT SEVERAL U.S. LABS WHICH CONSIST OF A GAAS/ALGAAS QUANTUM WELL FABRY-PEROT CAVITY SANDWICHED BETWEEN N AND P DOPED HIGH REFLECTIVITY SEMICONDUCTOR MIRRORS (GAAS/ALGAAS QUARTER WAVE STACKS). OUR PHASE I RESEARCH PROVES THE FEASIBLITY OF UNIQUE APPROACH TO THE ELECTRIC ADDRESSABILITY OF THESE SURFACE EMITTING LASERS. FOR ADDRESSING A (M ...

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SOLAR CELLS ARE BEING FABRICATED USING THIN FILMS OF SILICON ON INEXPENSIVE, FLEXIBLE CLOTH SUBSTRATES. PHOTOVOLTAIC DEVICES FABRICATED WITH THESE STRUCTURES CAN DEMONSTRATE THE HIGH PERFORMANCE OF CRYSTALLINE SILICON WITH THE LIGHT WEIGHT OF THIN FILM SOLAR CELLS. THE RESULT IS A SOLAR CELL THAT HAS APPLICATIONS WHEREVER A LIGHTWEIGHT POWER SOURCE IS NEEDED. THE RADIATION TOLERANCE OF THIN CRYSTA ...