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Not Available This proposal is to develop a multi-Mega-pixel camera-on-a-chip usingstandard 0.3-micron complementary-metal-oxide-semiconductor (CMOS) technology to process the chip on an 8-inch wafer. The camera-on-a-chip is a multi-Mega-pixel active-pixel array contai

SOLAR CELLS ARE BEING FABRICATED USING THIN FILMS OF SILICON ON INEXPENSIVE, FLEXIBLE CLOTH SUBSTRATES. PHOTOVOLTAIC DEVICES FABRICATED WITH THESE STRUCTURES CAN DEMONSTRATE THE HIGH PERFORMANCE OF CRYSTALLINE SILICON WITH THE LIGHT WEIGHT OF THIN FILM SOLAR CELLS. THE RESULT IS A SOLAR CELL THAT HAS APPLICATIONS WHEREVER A LIGHTWEIGHT POWER SOURCE IS NEEDED. THE RADIATION TOLERANCE OF THIN CRYSTA ...

AstroPower is developing a highly sensitive UV detector based on epitaxial AlGaP/GaP heterostructures, a promising new material system for ultraviolet detectors. Detecting ultraviolet light is important to spectrophotometry, astronomy, high-energy physics, medicine, UV curing, photoresist exposure, and chemical processes. The large bandgap and crystalline quality of gallium phosphide will provide ...

AstroPower is developing a new process for the growth of large area, thin film 3C-SiC using a proprietary deposition technique followed by liquid phase epitaxy (LPE). Successful development of the growth process will provide high quality, thin film SiC in typical silicon wafer areas, allowing compatibility with existing silicon circuit foundries for devices where SiC is the material of choice. New ...

AstroPower will develop a two-junction monolithic tandem solar cell composed of (AlxGa1-x)0.51 In(0.49)P, which is lattice matched to GaAs, as the top cell in a three-junction, two-terminal tandem solar cell. This new tunable bandgap Al-Ga-In-P material is capable of current matching in a two-junction monolithic tandem solar cell two-terminal design of the Al-Ga-In-P over GaAs yielding a best case ...

1 New concepts in optical computing and optical interconnects require hardware developments of generic, compact, multi-element LED source array. A two dementional array of individually-addressable Light-emitting Diode optical emitters will be developed. An innovative CVD/LPE heteropitaxy technique will be employed for the monolithic integration of high-speed-surface-emitting AlGaAs/GaAs LEDs on si ...

We propose a new epitaxial growth technology for low-defect SiC substrates based on metallic solution growth of SiC on silicon and SiC wafers. A significant feature of the our approach is the use of epitaxial lateral overgrowth for "defect filtering." In the Phase I proposal, we present arguments that the proposed technology will lead to SiC material of unprecedented quality with respect to defect ...

There is much need for lasers with emission wavelengths in the mid-infrared (2 to 5 microns) for applications that include molecular spectroscopy, environmental and atmospheric trace gas analysis, long haul fiber communications, laser surgery, and atmospheric free-space laser transmission. The Lebedev Physical Institute in Moscow has reported double heterostructure GaInAsSb/GaAlAsSb lasers emittin ...