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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off
SBC: MICROLINK DEVICES INC Topic: DEFOA0000941"In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...
SBIR Phase II 2013 Department of EnergyARPA-E -
Advanced Manufacturing and Performance Enhancements for Reduced-cost Silicon Carbide MOSFETs (AMPERES)
SBC: MONOLITH SEMICONDUCTOR INC Topic: DEFOA0000941The team of Monolith Semiconductor, X-FAB Texas, Rensselaer, United Technologies and Univ. of Arkansas will provide breakthrough advances in switch performance and manufacturing cost reduction to deliver cost-effective 100Amp, 1200V SiC power MOSFETs to enable widespread adoption. Based on the combined expertise in both Silicon and SiC power device design and processing, Monolith Semiconductor is ...
SBIR Phase II 2013 Department of EnergyARPA-E -
IMAGINE: Imagery Management through Agile, Geo-Interactive, Natural Embodiment
SBC: APTIMA INC Topic: NGA11002Overhead imagery analysts employ computer-based software as Electronic Light Tables (ELTs), to perform detailed analysis of aerial images in search of elements of interest. Conventional display design for ELT software requires analysts to take their eyes away from the image they are analyzing to perform routine functions. This interaction overhead typically leads to losses in visual momentum and i ...
SBIR Phase II 2013 Department of DefenseNational Geospatial-Intelligence Agency -
Micro-technology Enhanced Pediatric Lens Capsulotomy Device
SBC: Mynosys Cellular Devices, Inc. Topic: NEIDESCRIPTION (provided by applicant): We propose an innovative microtechnology-enhanced surgical device that solves a significant therapeutic bottleneck in the treatment of lens cataract in children. As the leading cause of childhood blindness, lens cataract interferes with the optical performance of the eye and if untreated, results in lifelong deficits in visual perception. The first step in pedi ...
SBIR Phase II 2013 Department of Health and Human ServicesNational Institutes of Health -
Rapidly Adaptable Nanotherapeutics
SBC: TECHULON, INC. Topic: SB121003Infections caused by drug resistant bacteria create a $30b problem for the healthcare industry. Techulon has developed a Rapidly Adaptable NanoTherapeutic (RANT) approach to address this problem, which utilizes genomic targeting, on-demand synthesis, and nanotherapeutic delivery. Component feasibility studies conducted during Phase I demonstrated successful targeting and inhibition levels in meth ...
SBIR Phase II 2013 Department of DefenseDefense Advanced Research Projects Agency -
Advanced Modular Payload for Small Unmanned Air Systems
SBC: Irvine Sensors Corporation Topic: A10039Enhancing the mission capabilities of sensors based on small UAS requires both the exploitation of advanced passive and active sensor technologies and the development of a new, modular system architecture paradigm. Characteristics of Irvine Sensors Corporations proposed modular sensor concept includes a choice of VNIR, SWIR, or thermal imaging combined with SWIR 3D LIDAR Imaging to enhance resolut ...
SBIR Phase II 2013 Department of DefenseArmy -
Vertical GaN transistors on bulk GaN substrates
SBC: Avogy Topic: 1In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide operating temperature range (-55 to 150°C). The target specific on-resistance for the transistor is 30x low ...
SBIR Phase II 2013 Department of EnergyARPA-E -
Electric-Field (E-field) Gunshot Detection System (GDS)
SBC: QUASAR FEDERAL SYSTEMS, INC. Topic: A12001Soldiers and Marines manning the Objective Gunner Protection Kit (OGPK) need an accurate, real-time notification system to detect small-arms threat locations even in complex firefight environments involving multiple shooters, different weapons (single fire to full automatic, silenced guns, subsonic bullets), background detonations and explosions, and man-made noise/interference. Existing first-sho ...
SBIR Phase II 2013 Department of DefenseArmy -
Residual Property Prediction for Damage Composite Structures
SBC: GLOBAL ENGINEERING RESEARCH AND TECHNOLOGIES, LLC Topic: A12083Compression After Impact (CAI) response is widely used for characterizing damage tolerance of aerospace grade composite materials in structural design. Since impact induced damage is not readily visible in many instances, quantification of residual stiffness and strength under different service conditions following impact is critical for ensuring structural safety until the component or the struct ...
SBIR Phase II 2013 Department of DefenseArmy -
Advanced Manufacturing and Performance Enhancements for Reduced-cost Silicon Carbide MOSFETs (AMPERES)
SBC: MONOLITH SEMICONDUCTOR INC Topic: N/AThe team of Monolith Semiconductor, X-FAB Texas, Rensselaer, United Technologies and Univ. of Arkansas will provide breakthrough advances in switch performance and manufacturing cost reduction to deliver cost-effective 100Amp, 1200V SiC power MOSFETs to enable widespread adoption. Based on the combined expertise in both Silicon and SiC power device design and processing, Monolith Semiconductor is ...
SBIR Phase II 2013 Department of EnergyARPA-E