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Diode Pumped Solid State Lasers (DPSSLs) are an important and rapidly growing light source. They also represent one of the most challenging thermal problems in industry, both in cooling the diode pump lasers and in the thermal management of the solidstate lasing rod itself. A significant amount of very successful research and development effort has been expended in the area of laser diode coolin ...

The popularity of nanotechnology symbolizes a rapid shrinking of physical dimensions in solid state devices. However, the diminishing sizes will eventually lead to problems including thermal instability. Our proposed proprietary approach takes advantagesof the nanometer-size especially for magnetic portions of the devices. This approach will work until the lateral dimensions of the devices become ...

Reliable high speed data transfer between subsystems in aerospace, military and commercial applications requires both high speed tranceiver circuitry and galvanic signal isolation. Low voltage differential signaling (LDVS) is an ideal solution for thetransceiver circuit implementation. This technology simultaneously meets the high speed, low power, noise immunity and design flexibility requireme ...

Reliable high speed data transfer between subsystems in aerospace, military and commercial applications requires both high speed tranceiver circuitry and galvanic signal isolation. Low voltage differential signaling (LDVS) is an ideal solution for thetransceiver circuit implementation. This technology simultaneously meets the high speed, low power, noise immunity and design flexibility requireme ...

Ballistic missile defense systems, as well as military and commercial space systems, such as communication satellites, require radiation hard electronics that can survive long term radiation exposure, and that can survive high dose rate burst events andrapidly reset following such a single event upset. This requirement provides the opportunity for the development of new FPGA devices that have hig ...

We propose to take the next steps in demonstrating a highly linear GaN/AlGaN MOSFET-based power amplifier that will be have increased power, improved linearity, high bandwidth, and improved adjacent channel power ratio over that presently achieved inother GaAs and GaN power amplifiers through Ka band. In this work, OSEMI will use it improved Gate-Oxide technology to form the gate passivating and ...

Spinnaker Semiconductor, in partnership with Lincoln Labs in Lexington, Massachusetts, will demonstrate 25nm physical gate length NMOS and PMOS devices based on Schottky source/drain technology. Spinnaker's patent-protected Schottky Barrier (SB) CMOStechnology is a fundamental and strategic leap forward for the entire high-performance silicon CMOS manufacturing industry (>$150 Billion in 2000) and ...

Spinnaker Semiconductor, in partnership with Lincoln Labs in Lexington, Massachusetts, will demonstrate 25nm physical gate length NMOS and PMOS devices based on Schottky source/drain technology. Spinnaker's patent-protected Schottky Barrier (SB) CMOStechnology is a fundamental and strategic leap forward for the entire high-performance silicon CMOS manufacturing industry (>$150 Billion in 2000) and ...