Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until September, 2020.

  1. Deep Ultra Violet (DUV) Diamond Based Light Emitting Diodes (02-214B)

    SBC: Sinmat Inc            Topic: N/A

    Sinmat Inc. working with University of Florida, proposes to develop an economical and scalable process for fabrication of diamond light emitting diodes (LEDs) that operate in the deep ultraviolet regime. These LEDs are expected to have significant usage inBMDO related activities as compact sources in detection and probes. The formation of diamond LEDs has recently been shown on doped homoepitaxial ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency
  2. Growth of AlN Crystals

    SBC: HEXATECH            Topic: N/A

    "The objective of this proposal is the fabrication of AlN substrates with single crystalline quality meeting or exceeding the standards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure, and asteep temperature gradient, yields high-purity AlN single crystals at commercially interesting growth rates by sublimation of AlN in a nitrogen ...

    STTR Phase II 2002 Department of DefenseMissile Defense Agency
  3. Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)

    SBC: HEXATECH            Topic: N/A

    "The objective of this proposal is to demonstrate the feasibility of large-area aluminum nitride (AlN) wafers for III-nitride substrate applications. The growth strategy consists of growing single crystalline AlN on adequately prepared SiC templates using asublimation process. We propose to employ a multi-step deposition process to (1) avoid SiC decomposition, (2) prepare the SiC seed surface for ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency
  4. Innovative Polishing Technology for Fabrication of High Performance Epi-ready GaSb Substrates

    SBC: Sinmat Inc            Topic: MDA12T003

    Antimony containing III-V semiconducting compounds are particularly attractive for the fabrication of a wide variety of electronic and optoelectronic devices such as photo detectors operating in the long wave infrared wavelength (12-32µm) range. The production of epi quality GaSb wafers still remains one of the important problems for rapid commercialization of GaSb devices. Sinmat Inc. proposes a ...

    STTR Phase I 2013 Department of DefenseMissile Defense Agency
  5. Large Scale Photonic Switching Using Laser Writable Polymer Waveguide Along with Reconfigurable Gratings

    SBC: NEW SPAN OPTO-TECHNOLOGY, INC.            Topic: N/A

    Photonic approaches are attractive for next generation computing and communication systems. In particular, photonic switch matrix is useful for reconfigurable optical interconnection of several high-speed computing systems for missile defense applications.Existing switching device architectures requiring N square cascaded matrix switching elements for N x N non-blocking switching limits the scalab ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency
  6. Ohmic Contacts to Bulk N-type Gallium Nitride

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    "Kyma Technologies and NCSU will collaborate to produce ohmic contacts to single crystal gallium nitride (GaN) substrates. We propose to develop metallization schemes for ohmic contacts to GaN substrates for device fabrication. This will be of the utmostimportance for producing devices with a vertical device structure on a native gallium nitride substrate. Gallium nitride devices produced on sa ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency
  7. Post Intercept Debris Predictions for EO/IR Scene Modeling

    SBC: Corvid Technologies LLC            Topic: MDA12T005

    Corvid Technologies is pleased to offer this STTR Phase I proposal in collaboration with The Johns Hopkins University Applied Physics Laboratory and Spectral Sciences, Incorporated. The emphasis of the proposed effort is to develop a new methodology for predicting late-time EO/IR signatures from high-velocity impacts during a Ballistic Missile Defense intercept event. This collaborative effort w ...

    STTR Phase I 2013 Department of DefenseMissile Defense Agency
  8. Process for volume production of GaN substrates (Subtopic A: Electronic Materials)

    SBC: HEXATECH            Topic: N/A

    "The objective of proposed research is to develop a commercially viable process for ammonothermal growth of gallium nitride (GaN) crystals suitable for fabrication of GaN wafers. The ammonothermal crystal growth method is modeled after the very successfulprocess of synthesizing alpha-quartz in supercritical water. In this process, a mineralizer attacks bulk nutrient to generate anions that are sol ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency
  9. rAAV5-hCNGB3 Gene Therapy for Achromatopsia: Safety and Efficacy in a Dog Model

    SBC: APPLIED GENETIC TECHNOLOGIES CORPORATION            Topic: N

    DESCRIPTION provided by applicant Complete achromatopsia is an autosomal recessive inherited congenital disorder of retinal cone photoreceptors Patients with complete achromatopsia experience extreme light sensitivity and daytime blindness and best visual acuity under non bright light conditions is usually or worse and generally stable over time In addition to poor acuity hypersensit ...

    STTR Phase I 2013 Department of Health and Human ServicesNational Institutes of Health
  10. RF-IR Data Fusion

    SBC: DECIBEL RESEARCH, INC            Topic: MDA12T002

    The development and integration of three unique and innovative algorithm prototypes into a"Fused Track and Characterization Schema"are proposed. This Schema will encompass the determination of signatures and characteristics of objects that can be identified by RF and EO/IR Sensors in order to enable multi-sensor data fusion and correlation. The first algorithm, the"3D Pose Estimation"Algorithm, p ...

    STTR Phase I 2013 Department of DefenseMissile Defense Agency
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