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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. Growth of AlN Crystals

    SBC: HEXATECH            Topic: N/A

    "The objective of this proposal is the fabrication of AlN substrates with single crystalline quality meeting or exceeding the standards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure, and asteep temperature gradient, yields high-purity AlN single crystals at commercially interesting growth rates by sublimation of AlN in a nitrogen ...

    STTR Phase II 2002 Department of DefenseMissile Defense Agency
  2. Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)

    SBC: HEXATECH            Topic: N/A

    "The objective of this proposal is to demonstrate the feasibility of large-area aluminum nitride (AlN) wafers for III-nitride substrate applications. The growth strategy consists of growing single crystalline AlN on adequately prepared SiC templates using asublimation process. We propose to employ a multi-step deposition process to (1) avoid SiC decomposition, (2) prepare the SiC seed surface for ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency
  3. Ohmic Contacts to Bulk N-type Gallium Nitride

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    "Kyma Technologies and NCSU will collaborate to produce ohmic contacts to single crystal gallium nitride (GaN) substrates. We propose to develop metallization schemes for ohmic contacts to GaN substrates for device fabrication. This will be of the utmostimportance for producing devices with a vertical device structure on a native gallium nitride substrate. Gallium nitride devices produced on sa ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency
  4. Post Intercept Debris Predictions for EO/IR Scene Modeling

    SBC: Corvid Technologies LLC            Topic: MDA12T005

    Corvid Technologies is pleased to offer this STTR Phase I proposal in collaboration with The Johns Hopkins University Applied Physics Laboratory and Spectral Sciences, Incorporated. The emphasis of the proposed effort is to develop a new methodology for predicting late-time EO/IR signatures from high-velocity impacts during a Ballistic Missile Defense intercept event. This collaborative effort w ...

    STTR Phase I 2013 Department of DefenseMissile Defense Agency
  5. Process for volume production of GaN substrates (Subtopic A: Electronic Materials)

    SBC: HEXATECH            Topic: N/A

    "The objective of proposed research is to develop a commercially viable process for ammonothermal growth of gallium nitride (GaN) crystals suitable for fabrication of GaN wafers. The ammonothermal crystal growth method is modeled after the very successfulprocess of synthesizing alpha-quartz in supercritical water. In this process, a mineralizer attacks bulk nutrient to generate anions that are sol ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency
  6. RF-IR Data Fusion

    SBC: Decibel Research, Inc.            Topic: MDA12T002

    The development and integration of three unique and innovative algorithm prototypes into a"Fused Track and Characterization Schema"are proposed. This Schema will encompass the determination of signatures and characteristics of objects that can be identified by RF and EO/IR Sensors in order to enable multi-sensor data fusion and correlation. The first algorithm, the"3D Pose Estimation"Algorithm, p ...

    STTR Phase I 2013 Department of DefenseMissile Defense Agency
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