Award Data

N/A

Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

The objective is to build and evaluate a novel neural computer architecture for tasks such as the real-time analysis of the output of large numbers of sensors tracking many objects simultaneously. This problem is analogous to the identification of aspecific event signature embedded in the vast quantity generated by a typical high-energy particle research facility, which represents one of the front ...

The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...

Attempts to grow large area low defect density aluminum nitride substrates has had limited success. We propose the use of Kyma Technologies' novel growth process for production of 4

This program will develop a process for growth of low defect density GaN epitaxial layer on aluminum nitride substrates. Utilizing a novel high rate material transfer process, thick, low defect density, free-standing AlN substrates will be fabricated byKyma Technologies. The nitride MOVPE growth process will be employed to grow gallium nitride epitaxial layers on this substrate material. The Al ...

The goal of the proposed research is to demonstrate that MCT's proprietary NanomizerT technology can be used to prepare nanocomposites films that provide a performance advantage over current composites being targeted at the proton exchange membrane fuelcell (PEMFC) market. Nanocomposite membranes are expected to play a major role in overcoming the following technical challenges associated with the ...

Herein we propose to apply the proprietary Combustion CVD (CCVD) process to the manufacture of novel structures for dynamic access memory (DRAM) and nonvolatile, ferroelectric random access memory (FRAM) devices. The CCVD process is a thin-film depositiontechnique that operates in the open-atmosphere using low-cost equipment and precursors. It has already demonstrated its ability to epitaxially ...

Nitronex will develop GaN on silicon substrates for GaN-based LNAs utilizing pendeoepitaxial growth techniques. The properties of these revolutionary low-defect-density GaN on Silicon wafers makes higher performing power devices with a high degree ofdevice integration possible resulting in system level improvements in military (power transmission, radar, wireless communications), industrial, and ...

N/A