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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. CyberScenarios for the Transporation, Distribution and Logistics Career Cluster

    SBC: Bright Futures Press Interactive Knowledge            Topic: N/A

    N/A

    SBIR Phase I 2001 Department of Education
  2. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. Programmable Analog Computer

    SBC: FOARD SYSTEMS DESIGN, INC.            Topic: N/A

    The objective is to build and evaluate a novel neural computer architecture for tasks such as the real-time analysis of the output of large numbers of sensors tracking many objects simultaneously. This problem is analogous to the identification of aspecific event signature embedded in the vast quantity generated by a typical high-energy particle research facility, which represents one of the front ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Growth of AlN Crystals

    SBC: HEXATECH            Topic: N/A

    The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. 4 Single Crystal Aluminum Nitride Substrates"

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Attempts to grow large area low defect density aluminum nitride substrates has had limited success. We propose the use of Kyma Technologies' novel growth process for production of 4

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Gallium Nitride Epitaxial Growth on Aluminum Nitride Substrates

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    This program will develop a process for growth of low defect density GaN epitaxial layer on aluminum nitride substrates. Utilizing a novel high rate material transfer process, thick, low defect density, free-standing AlN substrates will be fabricated byKyma Technologies. The nitride MOVPE growth process will be employed to grow gallium nitride epitaxial layers on this substrate material. The Al ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  7. A Versatile Nanofabrication Technology for Polymer / Inorganic Composite Proton Exchange Membranes

    SBC: Engi-Mat Co.            Topic: N/A

    The goal of the proposed research is to demonstrate that MCT's proprietary NanomizerT technology can be used to prepare nanocomposites films that provide a performance advantage over current composites being targeted at the proton exchange membrane fuelcell (PEMFC) market. Nanocomposite membranes are expected to play a major role in overcoming the following technical challenges associated with the ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Thin-Film Deposition of Advanced DRAM and FRAM Memory Device Structures

    SBC: Engi-Mat Co.            Topic: N/A

    Herein we propose to apply the proprietary Combustion CVD (CCVD) process to the manufacture of novel structures for dynamic access memory (DRAM) and nonvolatile, ferroelectric random access memory (FRAM) devices. The CCVD process is a thin-film depositiontechnique that operates in the open-atmosphere using low-cost equipment and precursors. It has already demonstrated its ability to epitaxially ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  9. Gallium Nitride on Silicon Materials Assessment for GaN-Based Low Noise Amplifiers using Pendeoepitaxial Growth Techniques

    SBC: Nitronex Corporation            Topic: N/A

    Nitronex will develop GaN on silicon substrates for GaN-based LNAs utilizing pendeoepitaxial growth techniques. The properties of these revolutionary low-defect-density GaN on Silicon wafers makes higher performing power devices with a high degree ofdevice integration possible resulting in system level improvements in military (power transmission, radar, wireless communications), industrial, and ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  10. Positive Solutions: A Web-based Program for Improving Challenging Behaviors

    SBC: Positive Behavioral Solutions, Inc.            Topic: N/A

    N/A

    SBIR Phase I 2001 Department of Education
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