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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. AF TOPIC NUMBER: AF00-120 Circular Trellis Coding for Wavelet Packet Modulation Digital Communications

    SBC: SCIENTIFIC RESEARCH CORP.            Topic: N/A

    The primary goal of the work to be accomplished under this SBIR Phase II effort is the implementation of an efficient and reliable wireless Circular Trellis Coded Wavelet Packet Modulation System (CTCWPMS). The developed prototype CTCWPMS will moreeffectively address a variety of wireless communications challenges that cannot be met using conventional Fourier source and channel coding methods. M ...

    SBIR Phase I 2001 Department of DefenseDefense Advanced Research Projects Agency
  2. A New Approach for the Growth of High Resistivity Silicon Carbide

    SBC: BANDGAP TECHNOLOGIES, INC.            Topic: N/A

    This Phase I program is aimed at demonstrating a novel SiC source material synthesis technique that will be used to grow high resistivity SiC. In this effort, we will demonstrate that the proposed source material synthesis technique will produce SiCstarting material that is far superior to presently used material in terms of purity and process time, and that the high purity source material can be ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  3. A Versatile Nanofabrication Technology for Polymer / Inorganic Composite Proton Exchange Membranes

    SBC: Engi-Mat Co.            Topic: N/A

    The goal of the proposed research is to demonstrate that MCT's proprietary NanomizerT technology can be used to prepare nanocomposites films that provide a performance advantage over current composites being targeted at the proton exchange membrane fuelcell (PEMFC) market. Nanocomposite membranes are expected to play a major role in overcoming the following technical challenges associated with the ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Cursor Control Camera Headset with Voice Recognition Capabilities

    SBC: SIGMA K CORP            Topic: N/A


    SBIR Phase I 2001 Department of Education
  5. CyberScenarios for the Transporation, Distribution and Logistics Career Cluster

    SBC: Bright Futures Press Interactive Knowledge            Topic: N/A


    SBIR Phase I 2001 Department of Education
  6. Desing of Technologies Other than Standard Metal Detection Devices

    SBC: USDigiComm Corporation            Topic: N/A


    SBIR Phase I 2001 Department of Education
  7. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Enhanced Tropospheric Effects Compensation System


    Propagation Research Associates (PRA) introduces an innovative system that willcorrect angle of arrival error for radars tracking long range, low elevation targets.The correction improvement will be an order of magnitude improvement over existingmodel based measurements and will extend time-lines for Ballistic Missile Defenseradars. The Enhanced Tropospheric Error Compensation (ETEC) System is pr ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  9. Gallium Nitride Epitaxial Growth on Aluminum Nitride Substrates

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    This program will develop a process for growth of low defect density GaN epitaxial layer on aluminum nitride substrates. Utilizing a novel high rate material transfer process, thick, low defect density, free-standing AlN substrates will be fabricated byKyma Technologies. The nitride MOVPE growth process will be employed to grow gallium nitride epitaxial layers on this substrate material. The Al ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  10. Gallium Nitride on Silicon Materials Assessment for GaN-Based Low Noise Amplifiers using Pendeoepitaxial Growth Techniques

    SBC: Nitronex Corporation            Topic: N/A

    Nitronex will develop GaN on silicon substrates for GaN-based LNAs utilizing pendeoepitaxial growth techniques. The properties of these revolutionary low-defect-density GaN on Silicon wafers makes higher performing power devices with a high degree ofdevice integration possible resulting in system level improvements in military (power transmission, radar, wireless communications), industrial, and ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
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