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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. In-Situ Monitoring during HVPE for the Producibility of Semi-Insulating GaN

    SBC: KYMA TECHNOLOGIES, INC.            Topic: MDA09T001

    This program will utilize in-situ monitoring devices during the HVPE growth of GaN in conjunction with thermal and gas flow modeling, to establish tighter tolerances over growth variables such as substrate temperature and growth rate, which will lead to more robust, producible HVPE GaN growth processes, and in turn increase large area wafer yield and boule thicknesses. The in-situ monitoring dev ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  2. Low Cost, High Performance Transmit/Receive Integrated Circuits on a Single Chip

    SBC: Versaq            Topic: MDA09T004

    In the proposed effort we plan to build a fully-operational X-band T/R Integrated Circuit. One of the key-elements to building a fully operational radar is the requisite RF electronics that feed to each antenna element. Historically, radar transmit/receive (T/R) modules have been implemented as complex, multi-chip GaAs MMICs, resulting in very high cost per T/R module, high launch weight, and high ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  3. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Growth of AlN Crystals

    SBC: HEXATECH            Topic: N/A

    The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
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