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The Award database is continually updated throughout the year. As a result, data for FY22 is not expected to be complete until September, 2023.
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Growth of AlN CrystalsSBC: HEXATECH Topic: N/A
The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...STTR Phase I 2001 Department of DefenseMissile Defense Agency
New Broad Band Rare-Earth-Doped Glasses For Optical Fiber CommunicationsSBC: KIGRE, INC. Topic: N/A
Kigre has an idea and evidence for a new family of broadband glasses that break all of Zachariasen's standard accepted rules for glass formation. This family of glasses is based upon the extensive use of multiple glass formers such as SiO2, B2O3, La2O3and P2O5. By employing multiple glass formers in a laser glass, Kigre is able to expand the bandwidth without sacrificing cross section and gain. ...STTR Phase I 2001 Department of DefenseMissile Defense Agency
New Rare-Earth-Doped Glass Fiber Lasers and Amplifiers for 1.54 um CommunicationsSBC: KIGRE, INC. Topic: N/A
Kigre's Phase I fiber amplifier development effort demonstrated 10dB of internal gain at 1.54um from 2.2 cm long section of MM-2 erbium ytterbium phosphate fiber amplifier pumped at 980nm. 26dB of gain was also produced from a 8.8com long section of thissame fiber pumped at 1480nm. Mode field image testing of a fiber show this MM-2 fiber to be perfect 1.54um single mode containment match to stan ...STTR Phase I 2001 Department of DefenseMissile Defense Agency
In-Situ Monitoring during HVPE for the Producibility of Semi-Insulating GaNSBC: KYMA TECHNOLOGIES, INC. Topic: MDA09T001
This program will utilize in-situ monitoring devices during the HVPE growth of GaN in conjunction with thermal and gas flow modeling, to establish tighter tolerances over growth variables such as substrate temperature and growth rate, which will lead to more robust, producible HVPE GaN growth processes, and in turn increase large area wafer yield and boule thicknesses. The in-situ monitoring dev ...STTR Phase I 2010 Department of DefenseMissile Defense Agency
AlInN/GaN HFET over Free-Standing bulk GaN substratesSBC: Sensor Electronic Technology, Inc. Topic: MDA09T001
SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with the incorporation of indium, we expect dramatic enhancement of these HFET in power density, reliability and high frequency operation. Homoepitaxial growth on native substrate and the use of AlInN/GaN ...STTR Phase I 2010 Department of DefenseMissile Defense Agency