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The Award database is continually updated throughout the year. As a result, data for FY22 is not expected to be complete until September, 2023.
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Development of a Truly Lattice-Matched III-Nitride Technology forSBC: CERMET, INC. Topic: N/A
Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...STTR Phase I 2001 Department of DefenseMissile Defense Agency
Growth of AlN CrystalsSBC: HEXATECH Topic: N/A
The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...STTR Phase I 2001 Department of DefenseMissile Defense Agency
Improved SiC Materials for High Power ElectronicsSBC: PHOENIX INNOVATION, INC. Topic: N/A
Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon.  SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...STTR Phase I 2001 Department of DefenseMissile Defense Agency
A Tunable Interferometric Random Optical Cross-SwitchSBC: Scientific Solutions, Inc. Topic: N/A
A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...STTR Phase I 2001 Department of DefenseMissile Defense Agency
Novel heterojunction diodes for High Power ElectronicsSBC: PHOTRONIX Topic: N/A
The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...STTR Phase I 2001 Department of DefenseMissile Defense Agency