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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Fast Switching Array for WDM-Photonic Time Delay

    SBC: AGILTRON, INC.            Topic: MDA08T012

    An innovative concept of a fast switching array for high bit-resolution photonic time delay that can be scalable to the ESA systems of MDA/Navy radars is proposed. The design is based on Electro-Optic (EO) effect incorporated with super miniature fiber collimation array, which is suitable to integrate in the current developing fiber based photonic WDM-true time delay technologies. The new EO switc ...

    STTR Phase I 2009 Department of DefenseMissile Defense Agency
  2. Reconfigurable Course-Grain Analog Arrays

    SBC: Triad Semiconductor, Inc.            Topic: MDA08T007

    Development of configurable analog array architectures that meet a wide range MDA system application. Development and implementation of radiation hard by design techniques for analog circuits at the physical layout and circuit design levels.

    STTR Phase I 2009 Department of DefenseMissile Defense Agency
  3. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Growth of AlN Crystals

    SBC: HEXATECH            Topic: N/A

    The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. Compact Laser Sources for Advanced Discrimination Seekers

    SBC: JGM ASSOCIATES, INC.            Topic: MDA08T004

    Phase I will conduct modeling and breadboard experiments to assess whether VHGM laser technology can achieve laser sources that enable active LADAR performance that surpasses present technology by a factor or 4, while packaging the laser head into a volume of 3 cubic inches. Phase II will build laser prototypes based on Phase I results.

    STTR Phase I 2009 Department of DefenseMissile Defense Agency
  6. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Spray-Coatable Metamaterials for Use as Narrow Bandpass Filters(1001-315)

    SBC: Triton Systems, Inc.            Topic: MDA08T009

    Triton, together with our STTR partner, proposes to develop the theory and fabrication capabilities necessary to develop a metamaterials coating solution for mirror optics that is capable of passing a narrow spectral band in the long wave infrared (LWIR) spectrum for the purposes of stray light correction in interceptor sensors. In the Phase I program we will deliver both a mathematical descripti ...

    STTR Phase I 2009 Department of DefenseMissile Defense Agency
  9. Novel heterojunction diodes for High Power Electronics

    SBC: PHOTRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
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