Award Data

An innovative concept of a fast switching array for high bit-resolution photonic time delay that can be scalable to the ESA systems of MDA/Navy radars is proposed. The design is based on Electro-Optic (EO) effect incorporated with super miniature fiber collimation array, which is suitable to integrate in the current developing fiber based photonic WDM-true time delay technologies. The new EO switc ...

Development of configurable analog array architectures that meet a wide range MDA system application. Development and implementation of radiation hard by design techniques for analog circuits at the physical layout and circuit design levels.

Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...

Phase I will conduct modeling and breadboard experiments to assess whether VHGM laser technology can achieve laser sources that enable active LADAR performance that surpasses present technology by a factor or 4, while packaging the laser head into a volume of 3 cubic inches. Phase II will build laser prototypes based on Phase I results.

Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

Triton, together with our STTR partner, proposes to develop the theory and fabrication capabilities necessary to develop a metamaterials coating solution for mirror optics that is capable of passing a narrow spectral band in the long wave infrared (LWIR) spectrum for the purposes of stray light correction in interceptor sensors. In the Phase I program we will deliver both a mathematical descripti ...

The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

The overall goals of our effort are to reduce the cost and lead times of test articles while maintaining their fidelity. Corvid Technologies will partner with North Carolina State University to examine why metal alloys produced by AM processes differ in high strain-rate response compared to traditional foundry (TM) alloys at their CAMAL facility. We will identify the differences in response by exa ...