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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Vertical GaN Substrates

    SBC: SIXPOINT MATERIALS, INC.            Topic: DEFOA0000941

    SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

    STTR Phase II 2014 Department of EnergyARPA-E
  2. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2014 Department of EnergyARPA-E
  3. Retrofittable and Transparent Super-Insulator for Single-Pane Windows

    SBC: NANOSD, INC.            Topic: DEFOA0001429

    NanoSD, Inc. with its partners will develop a transparent, nanostructured thermally insulating film that can be applied to existing single-pane windows to reduce heat loss. To produce the nanostructured film, the team will create hollow ceramic or polymer nanobubbles and consolidate them into a dense lattice structure using heat and compression. Because it is mostly air, the resulting nanobubble s ...

    STTR Phase II 2016 Department of EnergyARPA-E
  4. Epitaxial GaN on Flexible Metal Tapes for Low-Cost Transistor Devices

    SBC: IBEAM MATERIALS, INC.            Topic: DEFOA0000941

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2016 Department of EnergyARPA-E
  5. High Gain, High Power PCSS with Integrated Monolithic Optical Trigger

    SBC: Eureka Aerospace            Topic: A14AT004

    This proposal addresses the problem of PCSS/laser trigger integration using a single monolithic laser diode array, thus simplifying the entire optical delivery network necessary for efficient operation of PCSSs. The proposal constitutes a logical continuation of Phase I effort where the main focus was on the detailed design of the PCSS/laser diode array (LDA) integrated architecture. In Phase II ...

    STTR Phase II 2016 Department of DefenseArmy
  6. Chemical Analyzer System for In Situ and Real Time Surface Monitoring for Composition Control During Synthesis of Compound Semiconductor Films

    SBC: Staib Instruments, Inc.            Topic: A13AT011

    The area of thin film growth has progressed rapidly, producing many high performance new materials which require accuracy of their atomic composition to perform as expected. Any method to provide real time in situ information about the elemental composition of the growing surface is highly valuable for these new, complicated materials. Utilizing a new instrument design, the Phase I project team ...

    STTR Phase II 2014 Department of DefenseArmy
  7. Advanced Wavelength Tuners for Chem-Bio Detection Lasers

    SBC: LFK Technology Corp.            Topic: A11aT024

    Several laser types are in development by the government for advanced proximal sensors, including the quantum cascade laser, the miniature solid state laser with optical parametric oscillator and the miniature CO2 gas laser. The enabling critical component for all these advanced transmitters is the compact, robust, rapid, precision wavelength selector. It is proposed to develop and deliver a sta ...

    STTR Phase II 2014 Department of DefenseArmy
  8. Micromachined Probes for Measurement and Characterization of Terahertz Materials and Devices

    SBC: DOMINION MICROPROBES, INC.            Topic: A12aT022

    The objective of this phase II STTR program is twofold: (1) to design, prototype, and commercialize differential on-wafer probes for characterizing devices in the 140220 GHz and 220320 GHz bands, and (2) to engineer the geometry and material of the micromachined probe tip to enable robust, consistent, and low-resistance electrical contact to devices with various contact pad metallizations, includi ...

    STTR Phase II 2014 Department of DefenseArmy
  9. Automated Deployable Robust Training System

    SBC: BARRON ASSOCIATES, INC.            Topic: A15AT012

    Barron Associates, Inc. proposes to develop the Phase II Automated Deployable Robust Training (ADROIT) System, a comprehensive environment to train and deploy vertebrates to detect and mark landmines and unexploded ordnance (UXO) quickly and accurately. The ADROIT system will be designed to be cost-effective, automated, flexible, scalable, modular, and robust, with a focus on training efficiency. ...

    STTR Phase II 2016 Department of DefenseArmy
  10. High Gain, High Power PCSS with Integrated Monolithic Optical Trigger

    SBC: NESS ENGINEERING, INC.            Topic: A14AT004

    The objective of this Phase II proposal is to continue the development of a Photoconductive Semiconductor Switch (PCSS) with an integrated optical trigger that can switch at least 30 kV, 1 kA, 20 ns pulses with jitter 108 shots. Ness Engineering, Inc. (NEI) and Texas Tech University (TTU) propose to utilize wide bandgap materials to demonstrate lock-on switching and allow much less optical trigger ...

    STTR Phase II 2016 Department of DefenseArmy
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