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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2014 Department of EnergyARPA-E
  2. First-principles-based framework for discovery and design of sustainable non-rare-earth high-temperature alloy systems

    SBC: CFD Research Corporation            Topic: OSD12T06

    The aim of this STTR program is to develop protocols to discover rare-earth-free/rare-earth-lean magnetic alloys for replacing rare earth (RE) -based alloys for reducing the dependence of supply from China. The development of non-RE high temperature magnetic materials is very challenging. In Phase I, CFDRC in collaboration with its university partner has demonstrated a proof-of-concept computation ...

    STTR Phase II 2014 Department of DefenseOffice of the Secretary of Defense
  3. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase I 2013 Department of EnergyARPA-E
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