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Award Data
The Award database is continually updated throughout the year. As a result, data for FY22 is not expected to be complete until September, 2023.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
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Epitaxial GaN on Flexible Metal Tapes for Low-Cost Transistor Devices
SBC: IBEAM MATERIALS, INC. Topic: DEFOA0000941GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase II 2016 Department of EnergyARPA-E -
Compact Laser Drivers for Photoconductive Semiconductor Switches
SBC: ASR Corporation Topic: DTRA16A004A compact laser driver will allow photoconductive semiconductor switches to be used in small EMP simulator "building blocks" (EMPBB). Combined with a battery powered on-board pulsed power system, these EMPBBs will allow the construction of flexible EMP test facilities with nothing more than a single fiber optic timing connection to each EMPBB.
STTR Phase I 2016 Department of DefenseDefense Threat Reduction Agency -
Infectious Disease Diagnostics and Differentiation of Viral vs. Bacterial Infections for Point of Care Applications
SBC: GeneCapture, Inc. Topic: CBD15C001The modern warfighter faces the constant threat of endemic infections, multi-drug resistant bacteria and Biological Warfare Agents. In order to provide accurate front-line treatment that will curtail the overuse of antibiotics, a rapid and robust molecula
STTR Phase I 2016 Department of DefenseOffice for Chemical and Biological Defense -
Innovative Mitigation of Radiation Effects in Advanced Technology Nodes
SBC: RELIABLE MICROSYSTEMS LLC Topic: DTRA16A003Establish a radiation-aware analysis capability in a commercial EDA design flow that will enable first-pass success in radiation-hardened by design (RHBD) for DoD ASICs in much the same way that existing EDA design suites ensure first pass functionality and performance success of complex ASICs destined for commercial applications. Layout-aware, calibrated single-event radiation models that captur ...
STTR Phase I 2016 Department of DefenseDefense Threat Reduction Agency -
Epitaxial GaN on flexible metal tapes for low-cost transistor devices
SBC: IBEAM MATERIALS, INC. Topic: 1GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase II 2014 Department of EnergyARPA-E -
Epitaxial GaN on flexible metal tapes for low-cost transistor devices
SBC: IBEAM MATERIALS, INC. Topic: 1GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase I 2013 Department of EnergyARPA-E
