You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY22 is not expected to be complete until September, 2023.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Compact Laser Drivers for Photoconductive Semiconductor Switches

    SBC: ASR Corporation            Topic: DTRA16A004

    A compact laser driver will allow photoconductive semiconductor switches to be used in small EMP simulator "building blocks" (EMPBB). Combined with a battery powered on-board pulsed power system, these EMPBBs will allow the construction of flexible EMP test facilities with nothing more than a single fiber optic timing connection to each EMPBB.

    STTR Phase I 2016 Department of DefenseDefense Threat Reduction Agency
  2. Infectious Disease Diagnostics and Differentiation of Viral vs. Bacterial Infections for Point of Care Applications

    SBC: GeneCapture, Inc.            Topic: CBD15C001

    The modern warfighter faces the constant threat of endemic infections, multi-drug resistant bacteria and Biological Warfare Agents. In order to provide accurate front-line treatment that will curtail the overuse of antibiotics, a rapid and robust molecula

    STTR Phase I 2016 Department of DefenseOffice for Chemical and Biological Defense
  3. Innovative Mitigation of Radiation Effects in Advanced Technology Nodes

    SBC: RELIABLE MICROSYSTEMS LLC            Topic: DTRA16A003

    Establish a radiation-aware analysis capability in a commercial EDA design flow that will enable first-pass success in radiation-hardened by design (RHBD) for DoD ASICs in much the same way that existing EDA design suites ensure first pass functionality and performance success of complex ASICs destined for commercial applications. Layout-aware, calibrated single-event radiation models that captur ...

    STTR Phase I 2016 Department of DefenseDefense Threat Reduction Agency
  4. Rapid Development of Weapon Payloads via Additive Manufacturing

    SBC: MATSYS INC            Topic: DTRA16A001

    MATSYS proposes to adapt emerging additive manufacturing techniques (so-called 3-D Printing) for use with reactive structural materials and demonstrate this capability to rapidly fabricate reactive case. Our concept incorporates two major manufacturing steps: 3D printing of green compacts from pure Al or Al-based reactive powder blend; and Microwave (MW) sintering of green compacts into net-shaped ...

    STTR Phase I 2016 Department of DefenseDefense Threat Reduction Agency
  5. Self-fragmenting Structural Reactive Materials (SF-SRM) for High Combustion Efficiency

    SBC: MATSYS INC            Topic: DTRA16A002

    MATSYS proposes to develop, test and evaluate a scalable metal-based reactive structural material that will self-fragment to micron or sub-micron scale fuel particles when subjected to explosive shock loading, resulting in significantly enhanced metal combustion efficiency. Use of reactive material casings offers the potential for several-fold increases in blast and overpressure by generating rapi ...

    STTR Phase I 2016 Department of DefenseDefense Threat Reduction Agency
  6. Epitaxial GaN on Flexible Metal Tapes for Low-Cost Transistor Devices

    SBC: IBEAM MATERIALS, INC.            Topic: DEFOA0000941

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2016 Department of EnergyARPA-E
  7. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2014 Department of EnergyARPA-E
  8. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase I 2013 Department of EnergyARPA-E
US Flag An Official Website of the United States Government