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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Semantic Parsing and role Labeling In Combination Effort (SPLICE)
SBC: DECISIVE ANALYTICS CORPORATION Topic: DTRA14B003To Counter Weapons of Mass Destruction (CWMD), DTRA must analyze data from numerous sources about a diverse set of technologies and activities. The extreme diversity in content and the volume of DTRAs data combine to produce one of the most challenging analysis problems in the government. The CWMD mission therefore requires deep analysis - an in-depth understanding of all available data and correl ...
STTR Phase II 2017 Department of DefenseDefense Threat Reduction Agency -
Epitaxial GaN on Flexible Metal Tapes for Low-Cost Transistor Devices
SBC: IBEAM MATERIALS, INC. Topic: DEFOA0000941GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase II 2016 Department of EnergyARPA-E -
Epitaxial GaN on flexible metal tapes for low-cost transistor devices
SBC: IBEAM MATERIALS, INC. Topic: 1GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase II 2014 Department of EnergyARPA-E
