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Award Data
The Award database is continually updated throughout the year. As a result, data for FY22 is not expected to be complete until September, 2023.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
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Vertical GaN Substrates
SBC: Sixpoint Materials, Inc. Topic: DEFOA0000941SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...
STTR Phase II 2014 Department of EnergyARPA-E -
Epitaxial GaN on flexible metal tapes for low-cost transistor devices
SBC: IBEAM MATERIALS, INC. Topic: 1GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase II 2014 Department of EnergyARPA-E -
Retrofittable and Transparent Super-Insulator for Single-Pane Windows
SBC: NANOSD, INC. Topic: DEFOA0001429NanoSD, Inc. with its partners will develop a transparent, nanostructured thermally insulating film that can be applied to existing single-pane windows to reduce heat loss. To produce the nanostructured film, the team will create hollow ceramic or polymer nanobubbles and consolidate them into a dense lattice structure using heat and compression. Because it is mostly air, the resulting nanobubble s ...
STTR Phase II 2016 Department of EnergyARPA-E -
Epitaxial GaN on Flexible Metal Tapes for Low-Cost Transistor Devices
SBC: IBEAM MATERIALS, INC. Topic: DEFOA0000941GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase II 2016 Department of EnergyARPA-E -
Vertical GaN Substrates
SBC: Sixpoint Materials, Inc. Topic: DEFOA0000941SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...
STTR Phase II 2017 Department of EnergyARPA-E -
Vertical GaN Substrates
SBC: Sixpoint Materials, Inc. Topic: N/ASixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...
STTR Phase I 2014 Department of EnergyARPA-E -
Epitaxial GaN on flexible metal tapes for low-cost transistor devices
SBC: IBEAM MATERIALS, INC. Topic: 1GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase I 2013 Department of EnergyARPA-E -
Infectious Disease Diagnostics and Differentiation of Viral vs. Bacterial Infections for Point of Care Applications
SBC: GeneCapture, Inc. Topic: CBD15C001The modern warfighter faces the constant threat of endemic infections, multi-drug resistant bacteria and Biological Warfare Agents. In order to provide accurate front-line treatment that will curtail the overuse of antibiotics, a rapid and robust molecula
STTR Phase I 2016 Department of DefenseOffice for Chemical and Biological Defense -
Development of powder bed printing (3DP) for rapid and flexible fabrication of energetic material payloads and munitions
SBC: MAKEL ENGINEERING INC Topic: DTRA16A001This program will demonstrate how additive manufacturing technologies can be used with reactive and high energy materials to create rapid and flexible fabrication of payload and munitions. Our primary approach to this problem will be to use powder bed binder printing techniques to print reactive structures. The anticipated feedstock will consist of composite particles containing all reactant spe ...
STTR Phase I 2016 Department of DefenseDefense Threat Reduction Agency -
Novel Mixed-mode TCAD-Commercial PDK Integrated Flow for Radiation Hardening By Design
SBC: CFD RESEARCH CORPORATION Topic: DTRA16A003Cost-effective application of advanced commercial electronics technologies in DoD space systems requires early development of radiation-hardened-by-design (RHBD) techniques, and use of simulations is critical to the efficiency of this process. CFDRC has developed an integrated, mixed-mode simulation approach allowing their NanoTCAD device physics simulator to interface with commercial circuit simu ...
STTR Phase I 2017 Department of DefenseDefense Threat Reduction Agency