Award Data

SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

For effective protection against EMP and HPM threats, it is important to understand the physics of the threats, and also to quantify the effects they have on electrical systems. EMP and HPM vulnerability testing requires delivery of high peak power and electric fields to distant targets. The most practical solution to simulate such environments is to develop a modular, optically-isolated MV-antenn ...

Establish a radiation-aware analysis capability in a commercial EDA design flow that will enable first-pass success in radiation-hardened by design (RHBD) for DoD ASICs in much the same way that existing EDA design suites ensure first pass functionality and performance success of complex ASICs destined for commercial applications. Layout-aware, calibrated single-event radiation models that captur ...

The modern warfighter faces the constant threat of endemic infections, multi-drug resistant bacteria and Biological Warfare Agents. In order to provide accurate front-line treatment that will curtail the overuse of antibiotics, a rapid and robust molecula

This program will demonstrate how additive manufacturing technologies can be used with reactive and high energy materials to create rapid and flexible fabrication of payload and munitions. Our primary approach to this problem will be to use powder bed binder printing techniques to print reactive structures. The anticipated feedstock will consist of composite particles containing all reactant spe ...