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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Epitaxial GaN on Flexible Metal Tapes for Low-Cost Transistor Devices

    SBC: IBEAM MATERIALS, INC.            Topic: DEFOA0000941

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2016 Department of EnergyARPA-E
  2. Innovative Mitigation of Radiation Effects in Advanced Technology Nodes

    SBC: Reliable MicroSystems, LLC            Topic: DTRA16A003

    Establish a radiation-aware analysis capability in a commercial EDA design flow that will enable first-pass success in radiation-hardened by design (RHBD) for DoD ASICs in much the same way that existing EDA design suites ensure first pass functionality and performance success of complex ASICs destined for commercial applications. Layout-aware, calibrated single-event radiation models that captur ...

    STTR Phase I 2016 Department of DefenseDefense Threat Reduction Agency
  3. Compact Laser Drivers for Photoconductive Semiconductor Switches

    SBC: ASR Corporation            Topic: DTRA16A004

    A compact laser driver will allow photoconductive semiconductor switches to be used in small EMP simulator "building blocks" (EMPBB). Combined with a battery powered on-board pulsed power system, these EMPBBs will allow the construction of flexible EMP test facilities with nothing more than a single fiber optic timing connection to each EMPBB.

    STTR Phase I 2016 Department of DefenseDefense Threat Reduction Agency
  4. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2014 Department of EnergyARPA-E
  5. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase I 2013 Department of EnergyARPA-E
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