Award Data

In an effort to improve the design of radiation hardened electronic components, this proposal explores the feasibility of creating predictive modeling techniques for nanoscale material properties in advanced integrated electrical devices. This study encompasses the collaborative usage of high resolution Transmission Electron Microscope (HR-TEM) data, circuit design targeted electrical data, and ma ...

Radiation effects in microelectronic components are a significant concern for the reliability of DoD systems that operate at high altitudes or in outer space. Typical characterization efforts focus on macroscale degradation signatures from electrical measurements at device terminals. However, a comprehensive analysis of radiation-induced physical defects is not possible based solely on terminal me ...

Alphacore will evaluate and develop a new approach to multi-scale modeling of radiation effects in electronic device technologies based on novel material systems. Our approach aims to directly correlate nano-scale properties of novel materials systems with macro-scale electrical properties of devices constructed with those materials, and their radiation response. Radiation hardness assurance (RHA) ...

percapacitors provide energy densities comparable to thin film batteries, high power densities, ultrafast recharge, and long cycle lives for applications requiring high duty cycle and pulse power output.  Micro-supercapacitors (MSC) are the most promising energy storage technology for integration with energy harvesting, via micro-electro-mechanical systems (MEMS), and microelectronics integrated ...

The proposal “Down to Atomic Resolution Kelvin Probing of Integrated Circuits (DARK-PICs)” deals with improvement of Kelvin Force Microscopy (KFM) allowing detection/mapping of surface potential and related electric properties of semiconductors and integrated circuits at the atomic scale. This Phase I deals with the feasibility of developing a commercially KFM system with a spatial resolution ...

Radiation effects in microelectronics are a significant concern for DoD systems that operate at high altitudes or in outer space. Typical characterization efforts focus on macroscale degradation signatures from electrical measurements at device terminals. However, a comprehensive analysis of radiation-induced physical defects is not possible based solely on terminal measurements. CFD Research and ...