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The Award database is continually updated throughout the year. As a result, data for FY22 is not expected to be complete until September, 2023.
SBC: IBEAM MATERIALS, INC. Topic: 1
GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...STTR Phase I 2013 Department of EnergyARPA-E
SBC: Sixpoint Materials, Inc. Topic: N/A
SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...STTR Phase I 2014 Department of EnergyARPA-E