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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Vertical GaN Substrates
SBC: SIXPOINT MATERIALS, INC. Topic: DEFOA0000941SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...
STTR Phase II 2014 Department of EnergyARPA-E -
MK III Upper Extremity Exoskeleton
SBC: Ekso Bionics Inc Topic: 739552As the carry and protective gear of the modern war fighter increases, the burden on the human body will necessarily increase. In our present TALOS MkIII project, we are developing lower body augmentation to preserve speed and agility while bearing this weight. Yet we cannot ignore the impact of this weight on the upper body: in this project we propose to develop an upper body exoskeleton with p ...
STTR Phase II 2015 Department of DefenseSpecial Operations Command -
Data Driven Intent Recognition Framework
SBC: OTHER LAB, INC. Topic: NSF13599A critical aspect of exoskeleton control that has to date introduced a performance limitation is the ability of the exoskeleton to recognize the intent of the operator so it can apply assistance to their desired motion. This intent recognition effort is typically solved using ad-hoc methods where subject matter experts make design decisions and tune transitions to identify intended maneuvers as re ...
STTR Phase II 2016 Department of DefenseSpecial Operations Command -
Epitaxial GaN on flexible metal tapes for low-cost transistor devices
SBC: IBEAM MATERIALS, INC. Topic: 1GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase II 2014 Department of EnergyARPA-E -
Retrofittable and Transparent Super-Insulator for Single-Pane Windows
SBC: NANOSD, INC. Topic: DEFOA0001429NanoSD, Inc. with its partners will develop a transparent, nanostructured thermally insulating film that can be applied to existing single-pane windows to reduce heat loss. To produce the nanostructured film, the team will create hollow ceramic or polymer nanobubbles and consolidate them into a dense lattice structure using heat and compression. Because it is mostly air, the resulting nanobubble s ...
STTR Phase II 2016 Department of EnergyARPA-E -
Epitaxial GaN on Flexible Metal Tapes for Low-Cost Transistor Devices
SBC: IBEAM MATERIALS, INC. Topic: DEFOA0000941GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase II 2016 Department of EnergyARPA-E