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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Production of Chemical Reagents for Prompt-Agent-Defeat Weapons

    SBC: NALAS ENGINEERING SERVICES INC            Topic: DTRA14B001

    Nalas Engineering and Johns Hopkins University collaborated in a Phase I STTR program to study reactive mixtures of HI3O8 and nanocomposite fuels previously developed by the Weihs Group. These fuel/oxidizer mixtures are uniquely able to simultaneously produce heat and biocidal iodine gas, a combination designed to destroy biological weapons. The team at Nalas focused on evaluating conditions for p ...

    STTR Phase II 2017 Department of DefenseDefense Threat Reduction Agency
  2. Retrofittable and Transparent Super-Insulator for Single-Pane Windows

    SBC: NANOSD, INC.            Topic: DEFOA0001429

    NanoSD, Inc. with its partners will develop a transparent, nanostructured thermally insulating film that can be applied to existing single-pane windows to reduce heat loss. To produce the nanostructured film, the team will create hollow ceramic or polymer nanobubbles and consolidate them into a dense lattice structure using heat and compression. Because it is mostly air, the resulting nanobubble s ...

    STTR Phase II 2016 Department of EnergyARPA-E
  3. Vertical GaN Substrates

    SBC: SIXPOINT MATERIALS, INC.            Topic: DEFOA0000941

    SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

    STTR Phase II 2017 Department of EnergyARPA-E
  4. Epitaxial GaN on Flexible Metal Tapes for Low-Cost Transistor Devices

    SBC: IBEAM MATERIALS, INC.            Topic: DEFOA0000941

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2016 Department of EnergyARPA-E
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