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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Epitaxial GaN on Flexible Metal Tapes for Low-Cost Transistor Devices

    SBC: IBEAM MATERIALS, INC.            Topic: DEFOA0000941

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2016 Department of EnergyARPA-E
  2. First-principles-based framework for discovery and design of sustainable non-rare-earth high-temperature alloy systems

    SBC: CFD RESEARCH CORPORATION            Topic: OSD12T06

    The aim of this STTR program is to develop protocols to discover rare-earth-free/rare-earth-lean magnetic alloys for replacing rare earth (RE) -based alloys for reducing the dependence of supply from China. The development of non-RE high temperature magnetic materials is very challenging. In Phase I, CFDRC in collaboration with its university partner has demonstrated a proof-of-concept computation ...

    STTR Phase II 2014 Department of DefenseOffice of the Secretary of Defense
  3. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2014 Department of EnergyARPA-E
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