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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Top Coatings and Enhanced Cathodic Protection Capability
SBC: AMERICAN ENERGY TECHNOLOGIES CO Topic: MDA13T010American Energy Technologies Co. (a woman-owned small business concern of Arlington Heights, IL), will be joined by subcontractorAdvanced Technology Laboratories of Lockheed Martin Corp. (St. Paul, MN) in order to develop and fully furnish functional prototypes of two anti-corrosion technologies with the goal to deploy them in a variety of MDA-owned equipment platforms. The first technology is a t ...
SBIR Phase II 2016 Department of DefenseMissile Defense Agency -
High-End Tactical Grade Inertial Measurement Unit (IMU) Technology for Missile Defense
SBC: DIGITAL OPTICS TECHNOLOGIES INC Topic: MDA14019There is a need for tactical IMUs with better accuracy than the state of the art. We at Digital Optics Technologies (DOT) have been developing the superluminal ring laser gyroscope (SRLG) and superluminal ring laser accelerometer (SRLA). During Phase I of this program, we developed a new design that serves both functions simultaneously, a superluminal ring laser gyroscope and accelerometer (SRLGA) ...
SBIR Phase II 2016 Department of DefenseMissile Defense Agency -
Increased Lifetime and Decreased Dark Current in Ga-Free Long Wave Infrared (LWIR) T2SL through Defect Identification and Mitigation
SBC: SIVANANTHAN LABORATORIES, INC. Topic: MDA14021Absorber layers based on Type-II superlattices (T2SLs) composed of III-V compound semiconductors (e.g. InAs and InSb) are a promising sensor technology for infrared imaging; however, quantum efficiencies from as-grown T2SL material often falls short of the design target, particularly in high-Sb, LWIR T2SL designs that should provide high absorption efficiency.There is strong evidence that these sh ...
SBIR Phase II 2016 Department of DefenseMissile Defense Agency
