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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Low Cost, Efficient Microchannel Plasma Ozone System for Point of Use Water Treatment

    SBC: EP Purification, Inc.            Topic: A

    A team at EP Purification has performed research for the development and commercialization of low-cost microchannel plasma reactor modules capable of efficiently producing ozone for water treatment and other environmental applications in a slim form factor and size. The conservation of water resources for human consumption is a growing national priority. Ozone is a unique purification agent as it ...

    SBIR Phase II 2014 Environmental Protection Agency
  2. Inexpensive High Performance Continuous Ammonia Monitor

    SBC: VISTA PHOTONICS, INC.            Topic: D

    Environmental studies have proven that ammonia (NH3) presents a significant environmental hazard; therefore, accurate monitoring and control of NH3 concentration is required inorder to maintain appropriate air quality levels. Atmospheric ammonia contributes directly and indirectly to acidification, eutrophication, human health and climate change. For air pollution monitoring, the ammonia concentr ...

    SBIR Phase I 2014 Environmental Protection Agency
  3. High Performance Nanopillar Optical Antenna Avalanche Detector Operating at 1.06um

    SBC: Illinois Applied Research Associates LLC            Topic: MDA12014

    In this Phase II SBIR program, Illinois Applied Research Associates will design, manufacture, and test a 1.06 um optimized Linear Mode (LM) avalanche photodiode (APD) array. The array will be electrically and optically characterized and will be tested for environmental and application constraints for integration into terrestrial and space based applications. The ability to operate in linear mode ...

    SBIR Phase II 2014 Department of DefenseMissile Defense Agency
  4. 2-D Hyperspectral Imaging for High Speed Target Engagement and Identification

    SBC: KESTREL CORP            Topic: MDA12014

    A framing two dimensional (2-D) hyperspectral imager will be developed to operate in the short wavelength infrared and midwavelength infrared (SWIR-MWIR) bands.This instrument will allow spatial information to be gathered from the scene without spectral or spatial scanning.In Phase II, an advanced technology demonstrator will be designed and constructed.This demonstrator will be field tested in or ...

    SBIR Phase II 2014 Department of DefenseMissile Defense Agency
  5. Atmospheric Characterization for Directed Energy Applications

    SBC: MZA ASSOCIATES CORPORATION            Topic: MDA12017

    MZA extends its partnership with the Air Force Institute of Technology (AFIT) during Phase II to develop an integrated optical measurement and numerical weather prediction (NWP) atmospheric turbulence characterization system and atmospheric decision assistance toolkit application (DATA). We will develop a tracking telescope optical diagnostic system which images passing satellites or star fields a ...

    SBIR Phase II 2014 Department of DefenseMissile Defense Agency
  6. Top Coatings and Enhanced Cathodic Protection Capability for High-Value BMDS MDA Assets

    SBC: AMERICAN ENERGY TECHNOLOGIES CO            Topic: MDA13T010

    American Energy Technologies Co. (a woman-owned small business concern of Arlington Heights, IL), will be joined by subcontractors University of Massachusetts (Boston, MA) and Advanced Technology Laboratories of Lockheed Martin Corp. (St. Paul, MN) in order to develop two anti-corrosion technologies with the goal to deploy them in a variety of equipment. The first technology is a top coating whic ...

    STTR Phase I 2014 Department of DefenseMissile Defense Agency
  7. High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off [Phase IIS]

    SBC: MICROLINK DEVICES INC            Topic: 1

    In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...

    SBIR Phase II 2014 Department of EnergyARPA-E
  8. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2014 Department of EnergyARPA-E
  9. High performance dual band LWIR/LWIR Focal Plane Arrays based on Type-II superlattice

    SBC: MP Technologies, LLC            Topic: MDA09013

    Tracking and recognition of fast moving targets require fast, sensitive, uniform focal plane arrays (FPAs). However, high performance single-band FPAs are sometimes unable to discriminate a target from its background when they present similar infrared radiation at a given wavelength. This may occur even if the temperature of the objects is very different. In such a case, two-color FPAs offer an ad ...

    SBIR Phase II 2011 Department of DefenseMissile Defense Agency
  10. Defect Passivation for High Performance HgCdTe on Si

    SBC: EPIR TECHNOLOGIES INC            Topic: MDA11T002

    Hydrogen isotopes have been shown to reduce the electrical effects of various semiconductor defects. Specifically, monoatomic hydrogen and deuterium passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. We propose a novel method of controlling the intake of hydrogen in HgCdTe IRFPAs by using the H2/He plasma afterglow formed by flowing plasma-gene ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
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