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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
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A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
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Passivation of Type II Superlattices for IR Sensors
SBC: MP Technologies, LLC Topic: MDA06T011Cheaper and higher performance infrared sensors are needed for next generation ballistic missile defense programs. Type II InAs/GaSb superlattices represent the most promising material system capable of delivering a more manufacturable and affordable focal plane array technology than the current technology, while at the same time exhibiting similar or better performance. At present, one of the m ...
STTR Phase II 2007 Department of DefenseMissile Defense Agency -
MBE CdTe on Compliant Substrates for High Performance IRFPAs
SBC: EPIR TECHNOLOGIES INC Topic: MDA11T002Current state-of-the-art infrared focal plane arrays are based on HgCdTe grown on bulk CdZnTe substrates. The use of Si-based substrates would eliminate a number of drawbacks related to the HgCdTe/CdZnTe system and permit larger formats. We have developed growth protocols that produce material with good crystal quality for such a highly mismatched heteroepitaxial system. Double crystal rocking c ...
STTR Phase I 2011 Department of DefenseMissile Defense Agency -
Defect Passivation for High Performance HgCdTe on Si
SBC: EPIR TECHNOLOGIES INC Topic: MDA11T002Hydrogen isotopes have been shown to reduce the electrical effects of various semiconductor defects. Specifically, monoatomic hydrogen and deuterium passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. We propose a novel method of controlling the intake of hydrogen in HgCdTe IRFPAs by using the H2/He plasma afterglow formed by flowing plasma-gene ...
STTR Phase I 2011 Department of DefenseMissile Defense Agency -
Defect Reductions on Si Substrates for HgCdTe MBE Growth
SBC: SIVANANTHAN LABORATORIES, INC. Topic: MDA11T002Current state-of-the-art infrared focal plane arrays (IRFPAs) are based on HgCdTe material epitaxially grown on bulk CdZnTe substrates. The size of the IRFPAs is limited by the size of the available CdZnTe substrates and the thermal mismatch between CdZnTe and the Si readout circuit, which misaligns the photodiode array with respect to the circuit during heating and cooling cycles. Having HgCdTe ...
STTR Phase I 2011 Department of DefenseMissile Defense Agency